According to at least one embodiment of the present invention, a wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.

According to at least one embodiment of the present invention, a wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.

A Cu.sub.3Sn electrical interconnect and method of making same in an electrical device, such as for hybrid bond 3D-integration of the electrical device with one or more other electrical devices. The method of forming the Cu.sub.3Sn electrical interconnect includes: depositing a Sn layer in the via hole; depositing a Cu layer atop and in contact with the Sn layer; and heating the Sn layer and the Cu layer such that the Sn and Cu layers diffuse together to form a Cu.sub.3Sn interconnect in the via hole. During the heating, a diffusion front between the Sn and Cu layers moves in a direction toward the Cu layer as initially deposited, such that any remaining Cu layer or any voids formed during the diffusion are at an upper region of the formed Cu.sub.3Sn interconnect in the via hole, thereby allowing such voids or remaining material to be easily removed.

A Cu.sub.3Sn electrical interconnect and method of making same in an electrical device, such as for hybrid bond 3D-integration of the electrical device with one or more other electrical devices. The method of forming the Cu.sub.3Sn electrical interconnect includes: depositing a Sn layer in the via hole; depositing a Cu layer atop and in contact with the Sn layer; and heating the Sn layer and the Cu layer such that the Sn and Cu layers diffuse together to form a Cu.sub.3Sn interconnect in the via hole. During the heating, a diffusion front between the Sn and Cu layers moves in a direction toward the Cu layer as initially deposited, such that any remaining Cu layer or any voids formed during the diffusion are at an upper region of the formed Cu.sub.3Sn interconnect in the via hole, thereby allowing such voids or remaining material to be easily removed.

An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.

A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.