A chip scale package structure is provided. The chip scale package structure includes an image sensor chip and a chip. The image sensor chip includes a first redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the first redistribution layer. The chip includes a plurality of through silicon via (TSV) and a second redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the second redistribution layer. The area of the chip is smaller than that of the image sensor chip. The second redistribution layer of the chip bonds to the first redistribution layer of the image sensor chip.

A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die at a first level, a second IC die at a second level, and a third IC die at a third level, the second level being in between the first level and the third level. A first interface between the first level and the second level is electrically coupled with high-density interconnects of a first pitch and a second interface between the second level and the third level is electrically coupled with interconnects of a second pitch. In some embodiments, at least one of the first IC die, second IC die, and third IC die comprises another microelectronic assembly. In other embodiments, at least one of the first IC die, second IC die, and third IC die comprises a semiconductor die.

A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die at a first level, a second IC die at a second level, and a third IC die at a third level, the second level being in between the first level and the third level. A first interface between the first level and the second level is electrically coupled with high-density interconnects of a first pitch and a second interface between the second level and the third level is electrically coupled with interconnects of a second pitch. In some embodiments, at least one of the first IC die, second IC die, and third IC die comprises another microelectronic assembly. In other embodiments, at least one of the first IC die, second IC die, and third IC die comprises a semiconductor die.

A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.

A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.

Provided is a semiconductor package structure including a first die having a first bonding structure thereon, a second die having a second bonding structure thereon, a metal circuit structure, and a first protective structure. The second die is bonded to the first die such that a first bonding dielectric layer of the first bonding structure contacts a second bonding dielectric layer of the second bonding structure. The metal circuit structure is disposed over a top surface of the second die. The first protective structure is disposed within the top surface of the second die, and sandwiched between the metal circuit structure and the second die.

Provided is a semiconductor package structure including a first die having a first bonding structure thereon, a second die having a second bonding structure thereon, a metal circuit structure, and a first protective structure. The second die is bonded to the first die such that a first bonding dielectric layer of the first bonding structure contacts a second bonding dielectric layer of the second bonding structure. The metal circuit structure is disposed over a top surface of the second die. The first protective structure is disposed within the top surface of the second die, and sandwiched between the metal circuit structure and the second die.

A package includes an interposer structure including a first via; a first interconnect device including conductive routing and which is free of active devices; an encapsulant surrounding the first via and the first interconnect device; and a first interconnect structure over the encapsulant and connected to the first via and the first interconnect device; a first semiconductor die bonded to the first interconnect structure and electrically connected to the first interconnect device; and a first photonic package bonded to the first interconnect structure and electrically connected to the first semiconductor die through the first interconnect device, wherein the first photonic package includes a photonic routing structure including a waveguide on a substrate; a second interconnect structure over the photonic routing structure, the second interconnect structure including conductive features and dielectric layers; and an electronic die bonded to and electrically connected to the second interconnect structure.

A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a glass substrate having a plurality of conductive through-glass vias (TGV); a magnetic core inductor including: a first conductive TGV at least partially surrounded by a magnetic material; and a second conductive TGV electrically coupled to the first TGV; a first die in a first dielectric layer, wherein the first dielectric layer is on the glass substrate; and a second die in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the second die is electrically coupled to the magnetic core inductor.