A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

This document describes systems and techniques of a depth-adaptive mechanism for ball grid array dipping. In an aspect, a depth-adaptive mechanism having a tensioned mesh is positioned in a reservoir filled with flux. When solder balls of an integrated circuit component are dipped into the reservoir of flux, the solder balls are pressed up against the tensioned mesh. The tensioned mesh is configured to, first, elastically deform under the downward force applied by the solder balls and, second, provide an equal and opposite pushing force in order to facilitate solder ball extraction. In so doing, the solder balls of an integrated circuit component can be more easily extracted from flux when deep ball grid array dipping is performed.

An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

A conveyor system is configured to transport the electronic substrates through cleaning modules of a cleaning apparatus. The conveyor system includes a first outer frame member, a second outer frame member, a bottom belt assembly disposed between the first outer frame member and the second outer frame member, and a top belt assembly spaced from the bottom belt assembly. The bottom belt assembly and the top belt assembly are configured to an electronic substrate therebetween to transport the electronic substrate along the conveyor system and through the at least one cleaning module. The bottom belt assembly or the top belt assembly includes a mesh material belt fabricated from heat resistant synthetic fibers. The conveyor system further includes a plurality of pins secured to the bottom belt assembly or the top belt assembly to create at least one lane along a length of the conveyor system.

A chip transfer apparatus includes: a chip storage module in which a plurality of micro-semiconductor chips and a suspension including impurities are stored; a chip filtration module separating a first suspension including the plurality of micro-semiconductor chips and a second suspension including the impurities in the suspension; and a chip supply module configured to supply the first suspension onto the transfer substrate such that the first suspension is introduced from the chip filtration module and the plurality of micro-semiconductor chips are flowable on the transfer substrate.

A chip-stacking apparatus for stacking a chip on a substrate is provided. The chip-stacking apparatus includes a substrate support configured to carry the substrate and a transport device configured to dispose a chip to the substrate. The transport device includes a bond head including a bond base and an attaching element disposed on the bond base and configured to allow the chip to be attached thereon. The center area of the attaching element is higher than an edge area of the attaching element relative to the bond base.

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

Exemplified microscale selective laser sintering (μ-SLS or micro-SLS) systems and methods facilitate modeling of the nanoparticle powder bed by simulating the interactions between particles during the powder spreading operation. In particular, the exemplified methods and system use multiscale modeling techniques to accurately predict the formation and mechanical/electrical properties of parts produced by selective laser sintering of powder beds. Discrete element modeling is used for nanoscale particle interactions by implementing the different forces dominant at nanoscale. A heat transfer analysis is used to predict the sintering of individual particles in the powder beds in order to build up a complete structural model of the parts that are being produced by the SLS process.

A bonding apparatus includes a stage on which a substrate is seated, a gantry installed above the stage, a bonding unit configured to bond a chip to the substrate while moving along the gantry, and a control part moving the bonding unit to align the bonding unit with a bonding position on the substrate, controlling the bonding unit to allow the bonding unit to bond the chip at the bonding position, determining a movement distance of the bonding unit based on a weighted sum of a number of continuous operations and an idle time of the bonding unit.