A bonding apparatus includes a holder; a pressing member; and a curvature adjuster. The holder is configured to attract and hold a substrate to be bonded. The pressing member is configured to come into contact with a central portion of the substrate attracted to and held by the holder and press the substrate to allow the central portion of the substrate to be protruded. The curvature adjuster is configured to adjust a curvature of the substrate pressed by the pressing member.

A resin shaping device configured to cure a resin placed in a mold in a state in which the mold is pressed against a substrate, the resin shaping device comprising: a substrate holding unit configured to hold the substrate in an orientation such that a forming face for forming a resin part on the substrate faces vertically downward; a head configured to hold the mold from vertically below; a head drive unit configured to cause the head to face a position for formation of a resin part on the substrate, and then cause vertically upward movement of the head so that the head approaches the substrate holding unit and presses the mold from vertically below the substrate; and a resin curing unit configured to cure the resin placed in the mold in a state in which the mold is pressed against the substrate.

A semiconductor manufacturing apparatus includes; a component separating apparatus configured to separate a defective component from a substrate, a bump conditioning apparatus including an end mill cutter and receiving the substrate following separation of the defective component from the substrate, the bump conditioning apparatus being configured to cut a first connection bump using the end mill cutter to provide a conditioned first connection bump, and the first connection bump being exposed by separating the defective component from the substrate, and a component attaching apparatus configured to receive the substrate following provision of the conditioned first connection bump, and mount a new component including a second connection bump to the substrate by coupling the second connection bump and the conditioned first connection bump.

A substrate processing apparatus includes a chuck configured to attract and hold a substrate; an observer configured to observe multiple positions within a second surface of the substrate attracted to and held by the chuck, the second surface being opposite to a first surface thereof which is in contact with the chuck; and an analyzer configured to analyze observation results of the multiple positions. When a singularity regarding a height from a surface of the chuck attracting and holding the substrate exists on the second surface, the analyzer specifies a position of the singularity on the chuck.

A bonding apparatus bonds a first substrate having a first alignment mark and a second substrate having a second alignment mark. A first radiation unit radiates white light to an imaging area of a first imaging unit when the second alignment mark is imaged by the first imaging unit. A second radiation unit radiates white light to an imaging area of a second imaging unit when the first alignment mark is imaged by the second imaging unit. A controller detects positions of the first alignment mark and the second alignment mark by processing images obtained by the first imaging unit and the second imaging unit, corrects the detected position of the first alignment mark based on a relationship between a wavelength and an intensity of reflection light reflected from the first substrate, and controls a moving unit based on the corrected position of the first alignment mark.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

A wafer bonding apparatus includes lower and upper stages, lower and upper push rods, a position detection sensor, and processing circuitry. The stages may vacuum suction respective wafers on respective surfaces of the stages based on a vacuum pressure being supplied to respective suction holes in the respective surfaces from a vacuum pump. The push rods are movable through respective center holes in the stages to apply pressure to respective middle regions of the respective wafers. The position detection sensor may generate information indicating a bonding propagation position of the wafers based on detecting at least one wafer through a detection hole in at least one stage. The processing circuitry may process the information to detect the bonding propagation position and cause a change of at least one of a ratio of protruding lengths of the push rods, or a ratio of suction areas of the stages.

This document describes systems and techniques of a depth-adaptive mechanism for ball grid array dipping. In an aspect, a depth-adaptive mechanism having a tensioned mesh is positioned in a reservoir filled with flux. When solder balls of an integrated circuit component are dipped into the reservoir of flux, the solder balls are pressed up against the tensioned mesh. The tensioned mesh is configured to, first, elastically deform under the downward force applied by the solder balls and, second, provide an equal and opposite pushing force in order to facilitate solder ball extraction. In so doing, the solder balls of an integrated circuit component can be more easily extracted from flux when deep ball grid array dipping is performed.

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

This chip mounting system simultaneously images an alignment mark disposed on a substrate (WT) and an alignment mark disposed on a chip (CP), with the alignment marks disposed on the substrate (WT) and the chip (CP) being separated by a first distance at which the alignment marks fall within a depth-of-field range of imaging devices (35a, 35b). The chip mounting system calculates a relative positional deviation amount between the substrate (WT) and the chip (CP) from the imaged images of the alignment marks imaged by the imaging devices (35a, 35b) and, based on the calculated positional deviation amount, relatively moves the chip (CP) with respect to the substrate (WT) in a direction in which the positional deviation amount therebetween decreases.