In a method of manufacturing a semiconductor package, information with respect to a downward warpage of a reference package substrate, which may be bent with respect to a long axis and/or a short axis of the reference package substrate in applying heat to the reference package substrate to which a plurality of semiconductor chips may be attached using a die attach film (DAF), may be obtained. A package substrate, which may include a first surface to which the semiconductor chips may be attached using the DAF and a second surface opposite to the first surface, may be rotated with respect to the long axis or the short axis at an angle selected based on the information. The heat may be applied to the package substrate to cure the DAF and correct a warpage of the package substrate. Thus, warpage of the package substrate may be corrected for.

Apparatus for flattening a warped ball grid array (BGA) package, including a first plate having a first surface and opposite second surface and a second plate having a first surface and opposite second surface. The first surface of the first plate and the first surface of the second plate oppose each other with a gap there-between. The gap houses the warped BGA package there-in, the warped BGA package including a package substrate with solder balls attached to a device mounting surface of the package substrate to form a BGA thereon. The gap adjustable by changing the position of the first plate or of the second plate such that a pushing force is applicable to the warped BGA package. A method of manufacturing a flattened BGA package and computer having a circuit that include the flatted BGA package are also disclosed.

A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

A mounting apparatus includes: a bonding stage; a base; a mounting head for performing a temporary press-attachment process in which semiconductor chips are suction-held and temporarily press-attached to a mounted object and a final press-attachment process in which the temporarily press-attached semiconductor chips are finally press-attached; a film arrangement mechanism arranged on the bonding stage or the base; and a controller which controls driving of the mounting head and the film arrangement mechanism. The film arrangement mechanism includes: a film feed-out mechanism which has a pair of feed rollers with a cover film extended there-between and successively feeds out a new cover film; and a film movement mechanism which moves the cover film in a horizontal direction with respect to a substrate.

A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

A bonding method of a first member includes arranging an activated front surface of a first member and an activated front surface of a second member so as to face each other with a back surface of the first member attached to a sheet, pushing a back surface of the first member through the sheet to closely attach the activated front surface of the first member and the activated front surface of the second member, and stripping the sheet from the back surface of the first member while maintaining a state in which the activated front surface of the first member is closely attached to the activated front surface of the second member.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

The mounting apparatus includes: a bonding head 14 that bonds, while pressing, a semiconductor chip 100 onto a substrate 110 or another semiconductor chip 100; and a heating mechanism 16 that heats the semiconductor chip 100 from the side during the execution of this bonding. After two or more semiconductor chips 100 are stacked while being bonded by temporary pressure-bonding, the bonding head 14 heats and applies pressure to an upper surface of the resultant stacked body, thereby integrally pressure-bonding the two or more semiconductor chips 100, and at the time of this pressure-bonding the heating mechanism 16 heats the stacked body from the side.

A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.