A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A conveying unit for conveying a device chip onto a predetermined electrode of a board has a chip chuck that holds under suction one surface of the device chip, a support base to which the chip chuck is fixed in an inclinable manner, and a moving unit that moves the support base, in which a fixing mechanism that fixes the chip chuck to the support base has a plurality of leaf springs extending laterally radially from the chip chuck, the plurality of leaf springs are connected to the support base in the surroundings of the chip chuck, and the plurality of leaf springs are pulled one another, so that the chip chuck is supported in air in an inclinable manner.

Embodiments in accordance with the present inventive concept disclose a chip bonding apparatus that includes a stage configured to support a substrate and a heater that is disposed above the stage. The heater includes a heat generating portion and a body portion. The chip bonding apparatus further includes a bonding tool assembly fixing unit having a first portion connected to the body portion of the heater, and a second portion configured to receive the heat generating portion. The chip bonding apparatus further includes a first bonding tool connected to the heat generating portion; and a first bonding tool fixing unit having a third portion that is connected to the first portion, and a fourth portion configured to receive the first bonding tool. The bonding tool fixing unit may be attached by an electrostatic force or by coupling between a notch gripper and a corresponding notch.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

Disclosed are a die bonding apparatus, a substrate bonding apparatus, a die bonding method, and a substrate bonding method that are capable of bonding a die to a substrate or bonding substrates together without using a bonding medium such as an adhesion film and a solder bump. The die bonding method includes hydrophilizing a bonding surface of the die, by plasma processing, forming a liquid film on a bonding area of the substrate, by supplying a liquid including water to the bonding area of the substrate, pre-bonding the die to the substrate by bringing the die into contact with the liquid film, and post-bonding one or more dies to the substrate at the same time, by performing heat treatment in a state in which the one or more dies are pre-bonded to the substrate.

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A method and an apparatus for bonding semiconductor substrates are provided. The method includes at least the following steps. A first position of a first semiconductor substrate on a first support is gauged by a gauging component embedded in the first support and a first sensor facing towards the gauging component. A second semiconductor substrate is transferred to a position above the first semiconductor substrate by a second support. A second position of the second semiconductor substrate is gauged by a second sensor mounted on the second support and located above the first support. The first semiconductor substrate is positioned based on the second position of the second semiconductor substrate. The second semiconductor substrate is bonded to the first semiconductor substrate.

A mounting device comprises a substrate stage, a mounting head, an elevating unit, a recognition mechanism, and a control unit. The recognition mechanism acquires position information about a chip recognition mark and a substrate recognition mark using an imaging unit. The control unit calculates an amount of positional deviation between a chip component and a substrate from the position information about the chip recognition mark and the substrate recognition mark, and performs alignment by driving the mounting head and/or the substrate stage according to the amount of the positional deviation. The chip component and the substrate are brought closer with each other and the alignment is performed in a state in which the imaging unit simultaneously images the chip recognition mark and the substrate recognition mark within a depth of field, after which the chip component and the substrate are brought into close contact with each other.

A device for linearly moving bases with respect to an object, includes first and second bases, a linear scale provided with graduations at pitches in the moving direction, first and second encoder heads attached to the first and second bases, and a control unit. The control unit maintains an interval between the first and second encoder heads to be constant, and moves the first and second bases while sequentially detects a first and second graduation numbers, and calculates a distance on the scale between the first and second encoder heads by multiplying a difference between the first and second graduation numbers by the pitch, and calculates a position correction coefficient of the scale as a ratio of the interval with respect to the calculated distance, and controls the movement amount of the first movable body and the second movable body based on the position correction coefficient.