An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be LEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

An alignment method for aligning two substrates to be stacked, comprising measuring a position of a mark selected from plurality of marks disposed on at least one substrate of the two substrates and aligning the two substrates based on the position of the measured mark, wherein the mark to be measured is selected based on information relating to distortion of the at least one substrate. The mark may be a mark disposed in a region having a smaller distortion amount of the at least one substrate than a threshold. The mark may be a mark disposed in a region having a higher reproducibility of distortion that occurs in the at least one substrate than a threshold.

Place a first semiconductor chip onto an alignment carrier with protrusions of the semiconductor chip inserted into corresponding cavities of the alignment carrier, so that the protrusions and cavities locate the semiconductor chip with interconnect contacts overlying a window that is formed through the alignment carrier. Place a second semiconductor chip onto the alignment carrier with protrusions of the second semiconductor chip inserted into cavities of the alignment carrier, so that the protrusions and cavities locate the second semiconductor chip with interconnect contacts of the second semiconductor chip adjacent to the interconnect contacts of the first semiconductor chip and overlying the window. Fasten the semiconductor chips to the alignment carrier. Touch contacts of a interconnect bridge against the interconnect contacts of the first and second semiconductor chips by putting the interconnect bridge through the window.