A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.

The invention enables quick evacuation of a chamber to a specified target degree of vacuum while increasing selectivity of evacuation conditions. A vacuum-processing device contains a chamber 40 that enables a workpiece to be soldered in a vacuum environment, an operating part 20 that sets a condition for evacuating the chamber 40, a pump 23 that evacuates the chamber 40, and a control portion 61 that calculates the amount of decrease in the degree of vacuum when evacuating the chamber 40 using a predetermined pump output, sets the calculated value as a reference value and switches an evacuation property from the evacuation property including a lower pump output to the evacuation property including a higher pump output when the calculated amount of decrease in degree of vacuum in real time has become smaller than the reference value.

While a substrate is placed on a substrate placement stage provided in a central substrate transfer unit, the substrate is transferred to a component loading operation unit, after operation for loading a component on the substrate has been performed by the component loading operation unit, the central substrate transfer unit is moved to the side of a first component crimping operation unit to thereby transfer the substrate that remains placed on the substrate placement stage to the first component crimping operation unit, and the component is crimped to the substrate by the first component crimping operation unit.

While a substrate is placed on a substrate placement stage provided in a central substrate transfer unit, the substrate is transferred to a component loading operation unit, after operation for loading a component on the substrate has been performed by the component loading operation unit, the central substrate transfer unit is moved to the side of a first component crimping operation unit to thereby transfer the substrate that remains placed on the substrate placement stage to the first component crimping operation unit, and the component is crimped to the substrate by the first component crimping operation unit.

A bonding apparatus includes a stage on which a substrate is seated, a gantry installed above the stage, a bonding unit for bonding a chip to the substrate while moving along the gantry, a first temperature sensor installed on the bonding unit and providing a first temperature value of the bonding unit, a second temperature sensor installed at a periphery of the bonding apparatus and providing a second temperature value of an atmospheric temperature at the periphery of the bonding apparatus, and a control part causing the bonding unit to be aligned with a bonding position on the substrate, controlling the bonding unit to allow the bonding unit to bond the chip at the bonding position, and determining a movement distance of the bonding unit based on a weighted sum of the first temperature value and the second temperature value.

There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.

There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.

According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.