The invention provides an apparatus, for processing a semiconductor device, comprising a first tool which comprises a pressure application component, a guide, and a spacer moveable in the guide. A gap is defined between the spacer and the guide and is operable to allow the spacer to tilt in relation to the guide. The apparatus also comprises a second tool for holding the semiconductor device, wherein the first and second tools are moveable relative to each other between an uncoupled state and a coupled state. The spacer comprises a first portion proximate the pressure application component, wherein in the coupled state, the pressure application component is operable to apply a force as a first pressure to the first portion. The spacer also comprises a second portion distal from the pressure application component, wherein in the coupled state, the second portion is proximate the semiconductor device and is operable to transmit the force from the pressure application component to the semiconductor device as a second pressure.

A sintering press for sintering electronic components on a substrate is provided. The sintering press includes a pressing unit having a plurality of controllable presser rods to apply sintering pressure to the electronic components to be sintered, reaction elements forming a support plane for a respective substrate, an element plate slidably supporting the reaction elements, and a heating circuit with heating elements embedded in a heating body placed around the element plate to bring the element plate to a sintering temperature. A heat diffusion plate is placed in contact with the heating body and extends onto the element plate between the reaction elements, the diffusion plate being made of a material having a higher thermal conductivity than the element plate.

A sintering press for sintering electronic components on a substrate is provided. The sintering press includes a pressing unit having a plurality of controllable presser rods to apply sintering pressure to the electronic components to be sintered, reaction elements forming a support plane for a respective substrate, an element plate slidably supporting the reaction elements, and a heating circuit with heating elements embedded in a heating body placed around the element plate to bring the element plate to a sintering temperature. A heat diffusion plate is placed in contact with the heating body and extends onto the element plate between the reaction elements, the diffusion plate being made of a material having a higher thermal conductivity than the element plate.

Interconnecting a first chip and a second chip includes mounting the first and second chips to a chip handler having an opening and at least one support surface. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The first surface of the first chip and the first surface of the second chip mounted to the chip handler are supported by the at least one support surface of the chip handler. The first and second chips are placed on a chip support member with the chip handler from the second surfaces. A bridge member is inserted by a bridge handler through the opening of the chip handler to place the bridge member onto the first sets of terminals of the first and second chips that are exposed from the opening.

Provided is a flip-chip bonding apparatus using VCSEL device, and more particularly, to a flip-chip bonding apparatus using VCSEL device for bonding a flip-chip type semiconductor chip to a substrate using infrared laser light generated from the VCSEL device. The flip-chip bonding apparatus using VCSEL device may quickly control laser light to bond a semiconductor chip to a substrate, with high productivity and high quality.

According to one embodiment, there is provided a substrate bonding apparatus including a first chuck stage and a second chuck stage. The first chuck stage includes a first electromagnetic force generation unit. The first chuck stage is chuckable for a first substrate. The second chuck stage includes a second electromagnetic force generation unit. The second electromagnetic force generation unit faces the first electromagnetic force generation unit. The second chuck stage is chuckable for a second substrate.

According to one embodiment, there is provided a substrate bonding apparatus including a first chuck stage and a second chuck stage. The first chuck stage includes a first electromagnetic force generation unit. The first chuck stage is chuckable for a first substrate. The second chuck stage includes a second electromagnetic force generation unit. The second electromagnetic force generation unit faces the first electromagnetic force generation unit. The second chuck stage is chuckable for a second substrate.

Provided is a flip-chip bonding apparatus using VCSEL device, and more particularly, to a flip-chip bonding apparatus using VCSEL device for bonding a flip-chip type semiconductor chip to a substrate using infrared laser light generated from the VCSEL device. The flip-chip bonding apparatus using VCSEL device may quickly control laser light to bond a semiconductor chip to a substrate, with high productivity and high quality.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

A semiconductor device includes a first die; a second die attached over the first die; a metal enclosure directly contacting and extending between the first die and the second die, wherein the first metal enclosure is continuous and encircles a set of one or more internal interconnects, wherein the first metal enclosure is configured to electrically connect to a first voltage level; and a second metal enclosure directly contacting and extending between the first die and the second die, wherein the second metal enclosure is continuous and encircles the first metal enclosure and is configured to electrically connect to a second voltage level; wherein the first metal enclosure and the second metal enclosure are configured to provide an enclosure capacitance encircling the set of one or more internal interconnects for shielding signals on the set of one or more internal interconnects.