There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A method includes bringing into contact respective first sides of a plurality of dies and a die attach film on a major surface of a carrier wafer, and simultaneously heating portions of the die attach film contacting the plurality of dies in order to simultaneously bond the plurality of dies to the die attach film.

A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

A cover structure for a light source includes a frame having an inner space, a driver, and an oxygen discharger. The frame is combined with the light source such that an object disposed in the inner space is covered by the frame, and the inner space is sealed by the combined frame and light source to provide a closed space between the frame and the light source enclosing the object. The driver combines the frame and the light source by moving the frame toward the light source such that the frame contacts the light source. The oxygen discharger creates a low-oxygen state in the closed space by discharging oxygen from the closed space.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A bonding apparatus includes a chuck and a bonding head. The chuck is configured to carry a plurality of substrates to be bonded. The bonding head has a cavity facing the chuck and includes a divider, at least one pneumatic component and a diaphragm. The divider is disposed in the cavity and dividing the cavity into a plurality of compartments. The at least one pneumatic component is disposed in at least one of the compartments. The diaphragm covers the cavity and is disposed between the at least one pneumatic component and the chuck.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.