A method of operating a wire bonding machine is provided. The method includes the steps of: (a) supporting a substrate on a material handling system of the wire bonding machine; (b) changing a bend profile of the substrate; and (c) securing, after step (b), the substrate against a support structure of the wire bonding machine using a clamping element of the wire bonding machine, the support structure for supporting the substrate during a wire bonding operation, and the clamping element for securing the substrate to the support structure during the wire bonding operation.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

Embodiments disclosed herein include wire bonds and tools for forming wire bonds. In an embodiment, a wire bond may comprise a first attachment ball, and a first wire having a first portion contacting the first attachment ball and a second portion. In an embodiment, the wire bond may further comprise a second attachment ball, and a second wire having a first portion contacting the second attachment ball and a second portion. In an embodiment, the second portion of the first wire is connected to the second portion of the second wire.

A wire bonding apparatus connecting a lead of a mounted member with an electrode of a semiconductor die through a wire comprises a capillary through which the wire is inserted, a shape acquisition part which acquires the shape of the lead to which the wire is connected, a calculating part which calculates an extending direction of a wire tail extending from the end of the capillary based on the shape of a lead to which the wire is connected next, and a cutting part which moves the capillary in the extending direction and cuts the wire to form the wire tail after the lead is connected with the electrode through the wire. Thus, in the wire bonding using wedge bonding, joining part tails (183a, 283a, 383a) formed in continuation to a first bonding point can be prevented from coming into contact with each other.

A method comprises heating a first electrically conductive layer that is to be electrically contacted, and that is arranged on a first element, and pressing a first end of a bonding wire on the first electrically conductive layer by exerting pressure to the first end of the bonding wire, and further by exposing the first end of the bonding wire to ultrasonic energy, thereby deforming the first end of the bonding wire and creating a permanent substance-to-substance bond between the first end of the bonding wire and the first electrically conductive layer. The bonding wire either comprises a rounded cross section with a diameter of at least 125 m or a rectangular cross section with a first width of at least 500 m and a first height of at least 50 m.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

A method of operating a wire bonding machine is provided. The method includes the steps of: (a) supporting a substrate on a material handling system of the wire bonding machine; (b) changing a bend profile of the substrate; and (c) securing, after step (b), the substrate against a support structure of the wire bonding machine using a clamping element of the wire bonding machine, the support structure for supporting the substrate during a wire bonding operation, and the clamping element for securing the substrate to the support structure during the wire bonding operation.

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.

A bonding tool that executes an ultrasonic vibration processing of applying ultrasonic vibration to an application portion on a lead wire from a direct contact tip portion and a pair of press mechanisms having a pair of press rollers capable of performing a rotational operation. The pair of press mechanisms executes a press processing of pressing both sides of the application portion on the lead wire by the pair of press rollers at a time of execution of the ultrasonic vibration processing by the bonding tool and a movement processing of executing a rotational operation performed by the pair of press rollers to move the pair of press rollers on the lead wire while pressing the lead wire at a time of non-execution of the ultrasonic vibration processing.