Seamless bonding layers in semiconductor packages and methods of forming the same are disclosed. In an embodiment, a method includes forming a second passivation layer over a first metal pad and a second metal pad, the first metal pad and the second metal pad being disposed over a first passivation layer of a first semiconductor die; depositing a first bonding material over the second passivation layer to form a first portion of a first bonding layer, wherein at least a portion of a seam in the first bonding layer is between the first metal pad and the second metal pad; thinning the first portion of the first bonding layer to create a first opening from the seam; and re-depositing the first bonding material to fill the first opening and to form a second portion of the first bonding layer.

A method of forming a bonded assembly includes providing a first semiconductor die containing and first metallic bonding structures and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures, providing a second semiconductor die containing second metallic bonding structures, disposing the second semiconductor die in contact with the first semiconductor die, and annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

In accordance with an aspect of the present disclosure, a semiconductor device is provided. The semiconductor device includes a first semiconductor wafer and a second semiconductor wafer, wherein the second semiconductor wafer disposed on the first semiconductor wafer. The first semiconductor wafer includes a first substrate, a first metallization layer, a first dielectric layer, a first magnetic structure, and a first metal pad. The second semiconductor wafer includes a second substrate, a second metallization layer, a second dielectric layer, a second magnetic structure, and a second metal pad. The first magnetic structure is aligned with and in direct contact with the second magnetic structure, and a top surface of the first dielectric layer is in direct contact with a top surface of the second dielectric layer.

A fluid dispensing apparatus includes a workpiece carrier configured to carry a workpiece thereon, a dispensing nozzle disposed at a side of the workpiece carrier and configured to dispense a fluid toward the workpiece along a flow path, a light source disposed at a side of the flow path for emitting light passing through the flow path, a sensor positioned to sense the light from the light source and generating a sensing signal accordingly, and a processor coupled to the sensor and configured to determine an operation status of the dispensing nozzle according to the sensing signal.

Embodiments of the disclosure provide a sealing ring, a stacked structure, and a method for manufacturing a sealing ring. The sealing ring is arranged at a periphery of a device area of a chip, and includes an inner ring structure, a middle ring structure, and an outer ring structure. The middle ring structure is connected to the device area through a doped well. The doped well is located in part of a substrate corresponding to the inner ring structure and the middle ring structure, and is isolated from the inner ring structure.

A die bonding system including a bond head assembly for bonding a die to a substrate is provided. The die includes a first plurality of fiducial markings, and the substrate includes a second plurality of fiducial markings. The die bonding system also includes an imaging system configured for simultaneously imaging one of the first plurality of fiducial markings and one of the second plurality of fiducial markings along a first optical path while the die is carried by the bond head assembly. The imaging system is also configured for simultaneously imaging another of the first plurality of fiducial markings and another of the second plurality of fiducial markings along a second optical path while the die is carried by the bond head assembly. Each of the first and second optical paths are independently configurable to image any area of the die including one of the first plurality of fiducial markings.

A package includes a carrier substrate, a first die, and a second die. The first die and the second die are stacked on the carrier substrate in sequential order. The first die includes a first bonding layer, a second bonding layer, and an alignment mark embedded in the first bonding layer. The second die includes a third bonding layer. A surface of the first bonding layer form a rear surface of the first die and a surface of the second bonding layer form an active surface of the first die. The rear surface of the first die is in physical contact with the carrier substrate. The active surface of the first die is in physical contact with the third bonding layer of the second die.

A method of direct hybrid bonding first and second semiconductor elements of differential thickness is disclosed. The method can include patterning a plurality of first contact features on the first semiconductor element. The method can include second a plurality of second contact features on the second semiconductor element corresponding to the first contact features for direct hybrid bonding. The method can include applying a lithographic magnification correction factor to one of the first patterning and second patterning without applying the lithographic magnification correction factor to the other of the first patterning and the second patterning. In various embodiments, a differential expansion compensation structure can be disposed on at least one of the first and the second semiconductor elements. The differential expansion compensation structure can be configured to compensate for differential expansion between the first and second semiconductor elements to reduce misalignment between at least the second and fourth contact features.