A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A semiconductor storage device according to an embodiment includes: an array chip having a memory cell array; a circuit chip having a circuit electrically connected to a memory cell; and a metal pad bonding the array chip and the circuit chip together. The metal pad includes an impurity. A concentration of the impurity is lowered as separating in a depth direction apart from a surface in a thickness direction of the metal pad.

A method of manufacturing a semiconductor device includes embedding electrodes in insulating layers exposed to the joint surfaces of a first substrate and a second substrate, subjecting the joint surfaces of the first substrate and the second substrate to chemical mechanical polishing, to form the electrodes into recesses recessed as compared to the insulating layer, laminating insulating films of a uniform thickness over the entire joint surfaces, forming an opening by etching in at least part of the insulating films covering the electrodes of the first substrate and the second substrate, causing the corresponding electrodes to face each other and joining the joint surfaces of the first substrate and the second substrate to each other, heating the first substrate and the second substrate joined to each other, causing the electrode material to expand and project through the openings, and joining the corresponding electrodes to each other.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%.

A method for forming a multilayer conductive structure includes forming a first conductive portion; forming a second conductive portion containing ruthenium (Ru) therein on the first conductive portion; forming a third conductive portion on the second conductive portion; and performing a silicidation process on the second conductive portion.

Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions (6, 106) surrounded by dielectric materials (4, 104) comprising: A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e), B) a heat treatment step of said stack during which the back faces (10, 110) of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/−2 nm.

A substrate, assembly and method for bonding and electrically interconnecting substrates are provided. According to the method, two substrates are provided, each comprising metal contact structures that are electrically isolated from each other by a bonding layer of dielectric material. Openings are produced in the bonding layer, the openings lying within the surface area of the respective contact structures, exposing the contact material of the structures at the bottom of the openings. Then a layer of conductive material is deposited, filling the openings, after which the material is planarized, removing it from the surface of the bonding layer and leaving a recessed contact patch in the openings. The substrates are then aligned, brought into contact, and bonded by applying an annealing step at a temperature suitable for causing thermal expansion of the contact structures. Deformation of the conductive material of the contact structures through creep pushes the material into the openings from the bottom up, thereby bringing the contact patches into mutual and conductive contact.

A semiconductor package includes a base structure having a base pad, a first semiconductor chip on the base structure, and having a first connection pad bonded to the base pad, a first bonding structure including an base insulation layer of a base structure and a first lower insulation layer of the first semiconductor chip bonded to the base insulation layer, a second semiconductor chip on the first semiconductor chip, and having a second connection pad connected to the first through-electrode, and a second bonding structure including a first upper insulation layer of the first semiconductor chip, and a second lower insulation layer of the second semiconductor chip bonded to the first upper insulation layer, and the first upper insulation layer has a dummy insulation portion extending onto the base structure around the first semiconductor chip.

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is provided. The method includes the following operations. In a first semiconductor structure, a first bonding layer is formed having a first dielectric layer and a plurality of protruding contact structures. In a second semiconductor structure, a second bonding layer is formed having a second dielectric layer and a plurality of recess contact structures. The plurality of protruding contact structures are bonded with the plurality of recess contact structures such that each of the plurality of protruding contacts is in contact with a respective recess contact structure.