A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a bonded structure includes a first bonding layer including a first bonding contact and a first bonding alignment mark, a second bonding layer including a second bonding contact and a second bonding alignment mark, and a bonding interface between the first bonding layer and the second bonding layer. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface. The first bonding alignment mark includes a plurality of first repetitive patterns. The second bonding alignment mark includes a plurality of second repetitive patterns different from the plurality of first repetitive patterns.

A bonding apparatus includes a first holder, a second holder, a moving unit, a housing, an interferometer, a first gas supply and a second gas supply. The first holder is configured to attract and hold a first substrate. The second holder is configured to attract and hold a second substrate. The moving unit is configured to move a first one of the first holder and the second holder in a horizontal direction with respect to a second one thereof. The interferometer is configured to radiate light to the first one or an object moved along with the first one to measure a horizontal distance thereto. The first gas supply is configured to supply a clean first gas to an inside of the housing. The second gas supply is configured to supply a second gas to a space between the interferometer and the first one or the object.

A memory device includes a memory chip including a memory cell array connected to first word lines and first bit lines, first word line bonding pads respectively connected to the first word lines, and first bit line bonding pads respectively connected to the first bit lines, and a peripheral circuit chip, wherein the peripheral circuit chip includes a test cell array connected to second word lines and second bit lines, second word line bonding pads respectively connected to the first word line bonding pads, second bit line bonding pads respectively connected to the first bit line bonding pads, and a peripheral circuit connected to the second word line bonding pads and the second word lines or the second bit line bonding pads and the second bit lines.

In an embodiment, a method includes: bonding a back side of a first memory device to a front side of a second memory device with dielectric-to-dielectric bonds and with metal-to-metal bonds; after the bonding, forming first conductive bumps through a first dielectric layer at a front side of the first memory device, the first conductive bumps raised from a major surface of the first dielectric layer; testing the first memory device and the second memory device using the first conductive bumps; and after the testing, attaching a logic device to the first conductive bumps with reflowable connectors.

The invention relates to a measuring device for determining a course of a bonding wave in a gap (3) between a first substrate (2) and a second substrate (4).

Furthermore, the present invention relates to a corresponding method.

A semiconductor die includes first pads, switches that are electrically connected with the first pads, respectively, a test signal generator that generates test signals and to transmit the test signals to the switches, internal circuits that receive first signals through the first pads and the switches, to perform operations based on the first signals, and to output second signals through the switches and the first pads based on a result of the operations, and a switch controller that controls the switches so that the first pads communicate with the test signal generator during a test operation and that the first pads communicate with the internal circuits after a completion of the test operation.

A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

A memory device includes a memory chip including a memory cell array connected to first word lines and first bit lines, first word line bonding pads respectively connected to the first word lines, and first bit line bonding pads respectively connected to the first bit lines, and a peripheral circuit chip, wherein the peripheral circuit chip includes a test cell array connected to second word lines and second bit lines, second word line bonding pads respectively connected to the first word line bonding pads, second bit line bonding pads respectively connected to the first bit line bonding pads, and a peripheral circuit connected to the second word line bonding pads and the second word lines or the second bit line bonding pads and the second bit lines.

According to one embodiment, a manufacturing apparatus includes: a storage configured to store a work; a transfer arm configured to transfer the work; a hot bath configured to store a liquid; a mounting table configured to mount the work in the hot bath; and an upper arm configured to apply pressure to the work mounted on the mounting table.