A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.

A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.

An electronic package and method for manufacturing the same are provided. The electronic package includes a substrate and a wetting layer. The substrate includes a plurality of conductive step structures each including a first portion and a second portion. The first portion has a first bottom surface, a first outer surface and a first inner surface. The second portion has a second bottom surface, a second outer surface and a second inner surface, wherein the second portion partially exposes the first bottom surface. The wetting layer at least covers the second bottom surface, the second outer surface and the second inner surface of the second portion of each of the conductive step structures.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

Disclosed in the present specification are a substrate for transferring, with high reliability, a semiconductor light emitting element, and a method for manufacturing a display device by using same. Particularly, when a semiconductor light emitting element is self-assembled on an assembly substrate by using an electromagnetic field, an assembly groove in which a semiconductor light emitting element for alignment is assembled is formed in the assembly substrate. The semiconductor light emitting element for alignment, assembled in the assembly groove, is used for alignment in a step of being transferred to a final wiring substrate. Unlike conventional alignment keys, the semiconductor light emitting element for alignment reflects an alignment error of semiconductor light emitting elements that occurs during a transfer process after assembly. Therefore, when semiconductor light emitting elements are transferred to a wiring substrate on the basis of the semiconductor light emitting element for alignment, transfer accuracy can be improved.

A display apparatus including a circuit board, at least one LED stack configured to emit light, electrode pads disposed on the at least one LED stack and electrically connected to the at least one LED stack, and electrodes disposed on the electrode pads and electrically connected to the electrode pads, respectively, in which each of the electrodes has a fixed portion that is fixed to one of the electrode pads and an extending portion that is spaced apart from the one of the electrode pads, and the electrodes include at least two metal layers having different thermal expansion coefficients from each other.

A semiconductor device with redistribution layers formed utilizing dummy substrates is disclosed and may include forming a first redistribution layer on a first dummy substrate, forming a second redistribution layer on a second dummy substrate, electrically connecting a semiconductor die to the first redistribution layer, electrically connecting the first redistribution layer to the second redistribution layer, and removing the dummy substrates. The first redistribution layer may be electrically connected to the second redistribution layer utilizing a conductive pillar. An encapsulant material may be formed between the first and second redistribution layers. Side portions of one of the first and second redistribution layers may be covered with encapsulant. A surface of the semiconductor die may be in contact with the second redistribution layer. The dummy substrates may be in panel form. One of the dummy substrates may be in panel form and the other in unit form.