A semiconductor packaging method, a semiconductor assembly and an electronic device are disclosed herein. The semiconductor packaging method comprises forming a first-stage assembly, including: align and fix at least one first-stage device to a target position on a carrier plate by utilizing the self-alignment capability of first-stage alignment solder joints; and while using a clamping board to support an exposed side of the at least one first-stage device, performing injection molding through an opening in the carrier board or the clamping board. The packaging method further comprises align and fix a second-stage device to a target position on the first-stage assembly by utilizing the self-alignment capability of second-level alignment solder joints between the first-stage assembly and the second-stage device. The packaging method improves the operation speed and accuracy of the picking and placing of the first-stage device and the second-stage device, resulting in improved process efficiency and reduced process cost.

Embodiments relate to using nanoporous metal tips to establish connections between a first body and a second body. The first body is positioned relative to the second body to align contacts protruding from a first surface of the first body with electrodes protruding from a second surface of the second body. The second surface faces the first surface. The contacts, the electrodes, or both comprise nanoporous metal tips. A relative movement is made between the first body and the second body after positioning the first body to approach the first body to the second body. The contacts and the electrodes are bonded by melting and solidifying the nanoporous metal tips after approaching the first body and the second body.

An apparatus, comprising an integrated circuit (IC) package having at least one solder bond pad, a die having at least one solder bond pad, wherein the die is bonded to the IC package by at least one solder joint between the at least one solder bond pad of the die, and the at least one solder bond pad of the IC package, and an underfill material between the IC package and the die, wherein the at least one solder joint is embedded in the underfill material, and wherein the at least one solder joint comprises a first metallurgy and a second metallurgy.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

LED lighting systems and vehicle headlamp systems are described. An LED lighting system includes a silicon backplane having a top surface, a bottom surface, and side surfaces and a substrate surrounding the side surfaces of the silicon backplane, the substrate having a top surface, a bottom surface and side surfaces. First redistribution layers are provided on the top surface of the silicon backplane and the top surface of the substrate. Second redistribution layers are provided on the bottom surface of the silicon backplane and the bottom surface of the substrate. At least one via extends through the substrate between the first redistribution layers and the second redistribution layers and is filled with a metal material.

A power amplifier module includes a module substrate, a power transistor die, and a heat spreader. The module substrate has first, second, and third module pads exposed at a mounting surface. The power transistor die has an input/output surface that faces the mounting surface, an opposed ground surface, an input pad electrically coupled to the first module pad, an output pad electrically coupled to the second module pad, and an integrated power transistor. In an embodiment, the power transistor is a field effect transistor with a gate terminal coupled to the input pad, a drain terminal coupled to the output pad, and a source terminal coupled to the ground surface. The heat spreader has a thermal contact surface that is physically and electrically coupled to the ground surface of the power transistor die. An electrical ground contact structure is connected between the thermal contact surface and the third module pad.

Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.