Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device includes a stack of plural semiconductor chips. Each two adjacent semiconductor chips of the plural semiconductor chips is electrically connected by plural interconnects and physically connected by a first insulating bonding layer. A first stack of dummy chips is positioned opposite a first side of the stack of semiconductor chips and separated from the plural semiconductor chips by a first gap. Each two adjacent of the first dummy chips are physically connected by a second insulating bonding layer. A second stack of dummy chips is positioned opposite a second side of the stack of semiconductor chips and separated from the plural semiconductor chips by a second gap. Each two adjacent of the second dummy chips are physically connected by a third insulating bonding layer. The first, second and third insulating bonding layers include a first insulating layer and a second insulating layer bonded to the first insulating layer. An insulating layer is in the first gap and another insulating layer is in the second gap.

Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device includes a stack of plural semiconductor chips. Each two adjacent semiconductor chips of the plural semiconductor chips is electrically connected by plural interconnects and physically connected by a first insulating bonding layer. A first stack of dummy chips is positioned opposite a first side of the stack of semiconductor chips and separated from the plural semiconductor chips by a first gap. Each two adjacent of the first dummy chips are physically connected by a second insulating bonding layer. A second stack of dummy chips is positioned opposite a second side of the stack of semiconductor chips and separated from the plural semiconductor chips by a second gap. Each two adjacent of the second dummy chips are physically connected by a third insulating bonding layer. The first, second and third insulating bonding layers include a first insulating layer and a second insulating layer bonded to the first insulating layer. An insulating layer is in the first gap and another insulating layer is in the second gap.

A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.

The present disclosure is directed to a thermocompression bonding tool having a bond head with a surface for compression and heating and a sensor, a stage for compression and heating, and a controller, and a method for its use for chip gap height and alignment control. For chip gap height and alignment control, the controller is provided with a recipe displacement and temperature profile and measured offsets.

Provided is an electrode like a protruding electrode that is self-standing on a substrate. A conductive paste (202) contains a conductive powder, an alcoholic liquid component, and no adhesives. The conductive powder contains conductive particles having a thickness of 0.05 m or more and 0.1 m or less and a representative length of 5 m or more and 10 m or less, the representative length being a maximum diameter in a plane perpendicular to the direction of the thickness. The weight percentage of the alcoholic liquid component relative to the conductive paste is 8% or more and 20% or less.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

Disclosed herein are integrated circuit (IC) packages with temperature sensor traces, and related systems, devices, and methods. In some embodiments, an IC package may include a package substrate and an IC die disposed on the package substrate, wherein the package substrate includes a temperature sensor trace, and an electrical resistance of the temperature sensor trace is representative of an equivalent temperature of the temperature sensor trace.

A reliability cover that is disposed over at least one of an integrated circuit package and a Si die of the integrated circuit package is disclosed. The integrated circuit package is mountable to a printed circuit board via a plurality of solder balls. The reliability cover is configured to reduce a difference in a coefficient of thermal expansion between the integrated circuit package and the printed circuit board, and between the Si die and a substrate of the integrated circuit package by a threshold value.

A method for manufacturing a semiconductor device including a plurality of semiconductor chips includes steps of placing, on a first semiconductor chip, a second semiconductor chip, such that a plurality of bumps is located between the first semiconductor chip and the second semiconductor chip, determining a distance between the first semiconductor chip and the second semiconductor chip, and determining whether or not the distance is within a predetermined range and stopping placement of additional chips if the distance is determined to be outside the predetermined range.

A mounting device includes a thermocompression bonding head, a pressure reduction mechanism, and a resin sheet feed mechanism. The thermocompression bonding head is configured to heat a semiconductor chip while holding the semiconductor chip and to bond the semiconductor chip to a joined piece by compression. The thermocompression bonding head has a suction hole in a face that holds the semiconductor chip. The pressure reduction mechanism communicates with the suction hole and is configured to reduce pressure inside the suction hole. The resin sheet feed mechanism is configured to supply a resin sheet between the thermocompression bonding head and the semiconductor chip. An electrode that protrudes from a top face of the semiconductor chip is bonded by thermocompression after being embedded in the resin sheet.