In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.

A chip packaging method includes followings steps. A plurality of first chips are disposed on a carrier, wherein each of the first chips has a first active surface, and a plurality of first conductive pillars are disposed on the first active surface. A second active surface of a second chip is electrically connected to the first active surfaces of the first chips through a plurality of second conductive pillars. An encapsulated material is formed, wherein the encapsulated material covers the plurality of first chips, the plurality of first conductive pillars, the second chip and the plurality of second conductive pillars. The encapsulated material is partially removed to expose each of the plurality of first conductive pillars. A redistribution structure is formed on the encapsulated material, wherein the redistribution structure connects with the first conductive pillars.

A semiconductor package includes a semiconductor chip and a redistribution layer structure. The redistribution layer structure is arranged to form an antenna transmitter structure and an antenna receiver structure over the semiconductor chip, wherein patterns of the antenna receiver structure are located at different levels of the redistribution layer structure, and at least one pattern of the antenna transmitter structure is at the same level of the topmost patterns of the antenna receiver structure.

A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

A chip package includes a chip structure, a molding material, a conductive layer, a redistribution layer, and a passivation layer. The chip structure has a front surface, a rear surface, a sidewall, a sensing area, and a conductive pad. The molding material covers the rear surface and the sidewall. The conductive layer extends form the conductive pad to the molding material located on the sidewall. The redistribution layer extends form the molding material that is located on the rear surface to the molding material that is located on the sidewall. The redistribution layer is in electrical contact with an end of the conductive layer facing away from the conductive pad. The passivation layer is located on the molding material and the redistribution layer. The passivation layer has an opening, and a portion of the redistribution layer is located in the opening.

A method of detecting delamination in an integrated circuit package structure, the method includes forming a plurality of through vias over a carrier substrate; placing a device die over the carrier substrate and between the through vias, wherein the device die comprises a metal pillar; forming a molding material surrounding the device die and the through vias; forming a testing metal line extending along a top surface of the molding material and past an interface between the device die and the molding material; applying a current to the testing metal line; detecting an electrical signal of the testing metal line during the applying the current to the testing metal line; and determining, based on the detected electrical signal of the testing metal line, whether a delamination occurs between the device die and the molding material.

A fan-out semiconductor package includes: a core member having a through-hole; a semiconductor chip disposed in the through-hole; an encapsulant encapsulating at least portions of the core member and the semiconductor chip; and a connection member disposed on the core member and an active surface of the semiconductor chip and including a redistribution layer connected to the connection pads. The core member includes a plurality of wiring layers disposed on different levels, a dielectric is disposed between the plurality of wiring layers of the core member, one of the plurality of wiring layers includes an antenna pattern, the other of the plurality of wiring layers includes a ground pattern, and the antenna pattern is connected to the connection pads through the redistribution layer in a signal manner.