Embodiments described herein provide an anisotropic conductive film (ACF) positioned on a semiconductor package and techniques of using the ACF to test semiconductor devices positioned in or on the semiconductor package. In one example, a semiconductor package comprises: a die stack comprising one or more dies; a molding compound encapsulating the die stack; a substrate on the molding compound; a contact pad on a surface of the substrate and coupled to the die stack; a test pad on the surface of the substrate; a conductive path between the contact pad and the test pad, where an electrical break is positioned along the conductive path; and an ACF over the electrical break. Compressing the ACF by a test pin creates an electrical path that replaces the electrical break. Data can be acquired by test pin and provided to a test apparatus, which determines whether the dies in the die stack are operating properly.

A method of operating a wire bonding machine is provided. The method includes: (a) operating a wire bonding machine during at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation, wherein a bonding force is applied during the operation of the wire bonding machine; and (b) monitoring an accuracy of the bonding force of the wire bonding machine during the at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation.

An ultrasonic bonding apparatus includes an ultrasonic bonding machine having an ultrasonic tool for applying an ultrasonic wave to a bonding target member mounted on a fixed object fixed to a jig, while pressing a bonding member against the bonding target member; and a bonding inspection apparatus for inspecting a bonding quality of the bonding target member and the bonding member. The bonding inspection apparatus includes: a bonded-state measuring device for detecting a vibration in the jig or a housing of the ultrasonic bonding machine equipped with the jig, to thereby output a detection signal; and a bonded-state determination device for determining, in a bonding process for the bonding target member and the bonding member, a bonded state between the bonding target member and the bonding member on the basis of the detection signal outputted by the bonded-state measuring device.

Provided is a wire bonding state determination device which determines a bonding state between a pad and a wire after the wire is bonded to the pad. The wire bonding state determination device includes: a waveform detector which makes an incident wave incident to the wire, and detects a transmission waveform of the wire and a reflection waveform from a first bonding surface between the pad and the wire; and a bonding determination unit which determines the bonding state between the pad and the wire based on the transmission waveform and the reflection waveform detected by the waveform detector.

Product management and/or prompt defect analysis of a semiconductor device may be carried out without reducing the throughput in assembly and testing. Unique identification information is attached to a plurality of substrates (lead frames) used in manufacturing a semiconductor device (QFP) and to a transport unit for transporting a plurality of substrates, respectively. Identification information (rack ID) of the transport unit and identification information (substrate ID) of the substrate stored into the transport unit are associated with each other. The substrate is taken out from the transport unit set to a loader unit of each manufacturing apparatus and supplied to a processing unit, of the apparatus and in storing the substrate, the processing of which is complete, into a transport unit of an unloader unit of the apparatus, an association between identification information of the transport unit and the identification information of the substrate is checked.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A method of determining a bonding status between a wire and at least one bonding location of a workpiece is provided. The method includes the steps of: (a) bonding a portion of a wire to a bonding location of a workpiece using a bonding tool of a wire bonding machine; (b) determining a motion profile of the bonding tool for determining if the portion of the wire is bonded to the bonding location, the motion profile being configured to result in the wire being broken during the motion profile if the portion of the wire is not bonded to the bonding location; and (c) moving the bonding tool along the motion profile to determine if the portion of the wire is bonded to the bonding location. Other methods of determining a bonding status between a wire and at least one bonding location of a workpiece are also provided.

A method of operating a wire bonding machine is provided. The method includes: (a) operating a wire bonding machine during at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation, wherein a bonding force is applied during the operation of the wire bonding machine; and (b) monitoring an accuracy of the bonding force of the wire bonding machine during the at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation.

A method of forming a wire loop in connection with a semiconductor package is provided. The method includes the steps of: (1) providing package data related to the semiconductor package to a wire bonding machine; (2) providing at least one looping control value related to a desired wire loop to the wire bonding machine, the at least one looping control value including at least a loop height value related to the desired wire loop; (3) deriving looping parameters, using an algorithm, for forming the desired wire loop; (4) forming a first wire loop on the wire bonding machine using the looping parameters derived in step (3); (5) measuring actual looping control values of the first wire loop formed in step (4) corresponding to the at least one looping control value; and (6) comparing the actual looping control values measured in step (5) to the at least one looping control value provided in step (2).

A method for calibrating a wire clamp device includes: preparing a wire clamp device provided with a pair of arm parts having tips for clamping a wire, the arms extending from the tips toward base ends, and a drive part provided with a piezoelectric element for drive, connected to the base ends of the pair of arm parts and opening/closing the tips of the pair of arm parts; a step of detecting, by electrical continuity between the tips, a timing at which the pair of arm parts enters a closed state when the piezoelectric element for drive is driven, and acquiring a reference voltage; and a step of calibrating, on the basis of the reference voltage, an application voltage to be applied to the piezoelectric element for drive. Thus, it is possible to perform accurate and stable wire bonding.