Bonding processing for a plurality of bonding points of different distances with respect to a reference position (origin) of an object to be bonded without changing a moving distance of bonding means is provided. The bonding means, a bonding stage having a work-holder and a rotary mechanism unit for rotating the work-holder, and a control unit for controlling rotation of the work-holder are provided. The bonding means is movable relative to a placement surface of the work-holder in a reference orientation and has a reference position on its moving direction. The plurality of bonding points include bonding points of different separation distances from the reference position along the moving direction while the object to be bonded is being held to the work-holder in the reference orientation. The control unit corrects differences in the separation distances of the plurality of bonding points by controlling rotation of the work-holder.

The present invention provides a wire non-attachment inspection system (100) of a semiconductor device (10), wherein: the wire non-attachment inspection system (100) comprises an ultrasonic oscillator (40), an ultrasonic transducer (42), a camera (45), a display (48), and a control unit (50); and the control unit (50) calculates the difference in image between one frame of a captured video and a previous frame before the one frame, and displays, on the display, an image of a wire for which the difference exceeds a prescribed threshold value so as to be displayed differently than the image of another wire.

A method of determining a height value of a wire loop on a wire bonding machine is provided. The method includes the steps of: (a) imaging at least a portion of a wire loop using an imaging system on a wire bonding machine to detect a path of the portion of the wire loop; (b) moving a wire bonding tool towards a first contact portion of the wire loop in the path; (c) detecting when a portion of a conductive wire engaged with the wire bonding tool contacts the first contact portion of the wire loop; and (d) determining a height value of the wire loop at the first contact portion based on a position of the wire bonding tool when the portion of the conductive wire contacts the first contact portion of the wire loop.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3× or less is 50% or more relative to the total number of measurement points in the coating layer.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

It is an object to enable a non-destructive inspection of reliability of a bonding part and enabling an accurate inspection. A wedge tool includes: a groove which is formed along a direction of an ultrasonic vibration in a tip portion and in which a bonding wire is disposed in a wedge bonding; a first planar surface and a second planar surface disposed on both sides of the groove; and at least one convex portion formed away from the groove in at least one of the first planar surface and the second planar surface, wherein the bonding wire comes in contact with the convex portion by a deformation of the bonding wire in a bonding part of the bonding wire and a bonded object bonded to each other by a wedge bonding.

A method includes, receiving a layout design of at least part of an electronic module, the design specifying at least (i) an electronic device coupled to at least a substrate, and (ii) an electrical trace that is connected to the electronic device and has a designed route. A digital input, which represents at least part of an actual electronic module that was manufactured in accordance with the layout design but without at least a portion of the electrical trace, is received. An error in coupling the electronic device to the substrate, relative to the layout design, is estimated based on the digital input. An actual route that corrects the estimated error, is calculated for at least the portion of the electrical trace. At least the portion of the electrical trace is formed on the substrate of the actual electronic module, along the actual route instead of the designed route.

A method of determining a new search height for a wire bonding process is provided. The method includes the steps of: providing a search height; performing a plurality of wire bonding operations using the search height; monitoring wire bonding evaluation criteria during each of the plurality of wire bonding operations; and determining a new search height using the monitored wire bonding evaluation criteria.

Implementations of a semiconductor package system may include a first bond wire bonded to a portion of a leadframe and to a pad of a semiconductor die, the first bond wire coupled to one of a power source or a ground; and a second bond wire bonded to the portion of the leadframe and to a control integrated circuit. The portion of the leadframe may form a current sense area and the control integrated circuit may be configured to use the second bond wire and the current sense area to measure a current flowing through the first bond wire during operation.

A method of determining a bonding status between wire and at least one bonding location of a semiconductor device is provided. The method includes the steps of: (a) bonding a portion of wire to at least one bonding location of a semiconductor device using a bonding tool of a wire bonding machine; and (b) detecting whether another portion of wire engaged with the bonding tool, and separate from the portion of wire, contacts the portion of wire in a predetermined height range, thereby determining if the portion of wire is bonded to the at least one bonding location.