A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240 C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240 C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240 C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240 C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.