Provided are a mass transfer device and a mass transfer method. The mass transfer device is provided with multiple channels, a first opening of each channel is arranged on a first surface of the mass transfer device, a second opening of each channel is arranged on a second surface of the mass transfer device, and the distances between the channels are gradually increased along a direction from the first surface to the second surface. In the provided mass transfer method, through a laser irradiation mode, the Micro-LEDs are separated from the first substrate and enter the channels of the mass transfer device through the first openings, and falling into Micro-LED to-be-installed positions on a second substrate through the second openings of the channels, thereby transferring the Micro-LEDs from the first substrate to the second substrate.

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

In a general aspect, a fan-out wafer level package (FOWLP) can include a semiconductor die having an active surface, a backside surface, a plurality of side surfaces, each side surface of the plurality of side surfaces extending between the active surface and the backside surface, a plurality of conductive bumps disposed on the active surface, and an insulating layer disposed on a first portion of the active surface between the conductive bumps. The FOWLP can also include a molding compound encapsulating the backside surface, the plurality of side surfaces, and a second portion of the active surface between the conductive bumps and a perimeter edge of the active surface. The FOWLP can also include a signal distribution structure disposed on the conductive bumps, the insulating layer and the molding compound. The signal distribution structure can be configured to provide respective electrical connections to the plurality of conductive bumps.

A micro-LED display and a method for manufacturing same are disclosed. The disclosed micro-LED display may comprise: a circuit board; at least one first electrode formed on the circuit board; at least one micro-LED chip bonded onto the first electrode; a second electrode formed on the micro-LED chip; a bonding structure formed by heating the first electrode and the second electrode through laser irradiation; and at least one composite resin part supporting the bonding structure.

A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

A transfer printing method and a transfer printing apparatus. The transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate obtaining first position information of positions of the plurality of devices on the transfer substrate; obtaining second position information of corresponding positions, on a target substrate, of devices to be transferred; comparing the first position information with the second position information to obtain first target position information recording a first transfer position; and aligning the transfer substrate with the target substrate and performing a site-designated laser irradiation on at least part of devices on the transfer substrate corresponding to the first transfer position, simultaneously, according to the first target position information, so as to transfer the at least part of the devices from the transfer substrate to the target substrate.

A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.

A method includes attaching a wafer to a wafer chuck having a curved surface. The method further includes placing a device die on the wafer, such that a first dielectric layer of the device die is in contact with a second dielectric layer of the wafer, and performing an annealing process to bond the first dielectric layer to the second dielectric layer. The method further includes encapsulating the device die with an encapsulating material, forming redistribution lines overlapping the encapsulating material and the device die, and sawing the encapsulating material to form a plurality of packages.