A packaging structure and a packaging method are provided. The packaging method includes: providing a carrier; providing a plurality of device chips, a device chip including a first side and a second side, and a first interconnection structure being formed on the first side; attaching the plurality of device chips to the carrier; forming a first packaging layer covering a side wall of the device chip and filling between device chips on the carrier; providing an interconnect chip, a second interconnection structure being formed on the interconnect chip, and the second interconnection structure exposing a surface of the interconnect chip; bonding the interconnect chip to the device chip and the first packaging layer, the second interconnection structure of the interconnect chip facing and contacting the first interconnection structure of the device chip; and forming a second packaging layer covering the interconnect chip on the first packaging layer.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A semiconductor package structure includes a capacitor substrate and a first semiconductor die. The capacitor substrate has a first surface and a second surface opposite the first surface and includes a first redistribution structure, a second redistribution structure, a through via, and a first capacitor structure. The first redistribution structure is disposed on the first surface. The second redistribution structure is disposed on the second surface. The through via electrically couples the first redistribution structure to the second redistribution structure. The first capacitor structure is disposed between the first redistribution structure and the second redistribution structure and is electrically coupled to the second redistribution structure. The first semiconductor die is disposed over the capacitor substrate and is electrically coupled to the first capacitor structure through the second redistribution structure.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

The disclosure relates to a glass-based antenna array package. In an aspect, such a glass-based antenna array package includes a single glass substrate layer, one or more antennas attached to a first side of the glass substrate layer, at least one semiconductor device attached to a second side of the glass substrate layer, and a first photoimageable dielectric layer adhered to the second side of the glass substrate layer and encapsulating the at least one semiconductor device. A method of manufacturing the same is also disclosed.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A semiconductor package having various thermal dissipation features to dissipate heat. The semiconductor package may include an integrated circuit and a non-volatile storage device. Vias may be formed in the substrate and filled with a thermal conductive material. A pyrolytic graphite sheet overlays a top surface of the substrate and the vias. The pyrolytic graphite sheet defines one or more openings that enable the integrated circuit and the non-volatile storage device to be coupled to the top surface of the substrate. The integrated circuit is covered by another thermal conductive material such as a copper or silver paste. The copper or silver paste also covers a sidewall of the pyrolytic graphite sheet. The semiconductor package is enclosed by molding material and a metal layer. The pyrolytic graphite sheet connects the metal layer and the thermal conductive material overlaying the integrated circuit to form various thermal dissipation paths.

A semiconductor device includes a substrate, a lid, a semiconductor package and a thermal conductive bonding layer. The lid is attached to the substrate, wherein the lid has a first cavity and a second cavity extending from the first cavity to inside of the lid. The semiconductor package is disposed in the first cavity, below the second cavity and electrically connected to the substrate. The semiconductor package includes at least one semiconductor die, and the second cavity is disposed adjacent to periphery of the at least one semiconductor die in a top view of the semiconductor device. The thermal conductive bonding layer attaches the lid to the semiconductor package and extends into at least a portion of the second cavity.

A semiconductor device package provides for thermal considerations of a semiconductor die(s) through providing a thermal module. A substrate including an IC die disposed on the substrate is positioned between an upper plate and a lower plate of the thermal module. Heat pipes connect the upper plate and the lower plate. The thermal module allows for heat dissipation paths from the lower as well as upper plate. In some implementations, a liquid cooling plate is positioned between the substrate and the upper pate of the thermal module.

A semiconductor device includes: a package; a first island; a first semiconductor chip mounted on the first island; a second island; a second semiconductor chip mounted on the second island; and an insulating element provided on one or both of the first semiconductor chip and the second semiconductor chip. Each of the first island and the second island has an extension portion extending to be exposed from the package, and is supported by the package through the extension portion.