One aspect is a logic power module, with at least one logic component, at least one power component and a substrate. The logic element and the power component are provided in separate areas on the substrate. The logic component on the substrate is provided by thick printed copper; and the power component is provided by a metal-containing thick-film layer, and, provided thereon, a metal foil.

One aspect is a logic power module, with at least one logic component, at least one power component and a substrate. The logic element and the power component are provided in separate areas on the substrate. The logic component on the substrate is provided by thick printed copper; and the power component is provided by a metal-containing thick-film layer, and, provided thereon, a metal foil.

A method for forming a packaged electronic device includes providing a substrate having a first major surface and an opposing second major surface. The method includes attaching an electronic device to the first major surface of the substrate and providing a first conductive structure coupled to at least a first portion of the substrate. The method includes forming a dielectric layer overlying at least part of the first conductive structure. The method includes forming a conductive layer overlying the dielectric layer and connected to a second portion of the substrate. The first conductive structure, the dielectric layer, and conductive layer are configured as a capacitor structure and further configured as one or more of an enclosure structure or a stiffener structure for the packaged electronic device.

A method for forming a packaged electronic device includes providing a substrate having a first major surface and an opposing second major surface. The method includes attaching an electronic device to the first major surface of the substrate and providing a first conductive structure coupled to at least a first portion of the substrate. The method includes forming a dielectric layer overlying at least part of the first conductive structure. The method includes forming a conductive layer overlying the dielectric layer and connected to a second portion of the substrate. The first conductive structure, the dielectric layer, and conductive layer are configured as a capacitor structure and further configured as one or more of an enclosure structure or a stiffener structure for the packaged electronic device.

Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength can be improved by heating the bonded substrates at a temperature.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

The present invention provides a conductive material in which, even when the conductive material is left for a certain period of time, solder of conductive particles can be efficiently placed on an electrode, and, in addition, yellowing of the conductive material can be sufficiently suppressed during heating. The conductive material according to the present invention contains a plurality of conductive particles having solder at an outer surface portion of a conductive portion, a curable compound, and a boron trifluoride complex.

The present invention provides a conductive material in which, even when the conductive material is left for a certain period of time, solder of conductive particles can be efficiently placed on an electrode, and, in addition, yellowing of the conductive material can be sufficiently suppressed during heating. The conductive material according to the present invention contains a plurality of conductive particles having solder at an outer surface portion of a conductive portion, a curable compound, and a boron trifluoride complex.