A method of producing a power semiconductor module includes providing a power electronics carrier that includes a structured metallization layer disposed on an electrically insulating substrate layer, performing a production step of the power semiconductor module using the power electronics carrier, using a sensor to obtain crack information during the production step, the crack information comprising information about whether one or more cracks occurred in the electrically insulating substrate layer during the production step, analyzing the crack information, and performing one or more of the following after analyzing the crack information: performing a subsequent production step of the power semiconductor module dependent upon the analyzed crack information, cataloging the analyzed crack information, and performing a further investigative step to inspect the electrically insulating substrate layer using the analyzed crack information.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

Electronic device packages utilizing a stiffener coupled to a substrate with a magnetic lossy bonding layer to attenuate or absorb electromagnetic signals such as radio frequency interference (RFI) along with related systems and method are disclosed.

An electronic package is provided, including: a circuit structure having opposite first and second surfaces, wherein first and second circuit layers are formed on the first and second surfaces of the circuit structure, respectively, the first circuit layer having a minimum trace width less than that of the second circuit layer; a separation layer formed on the first surface of the circuit structure; a metal layer formed on the separation layer and electrically connected to the first circuit layer; an electronic element disposed on the first surface of the circuit structure and electrically connected to the metal layer; and an encapsulant formed on the circuit structure to encapsulate the electronic element. By disposing the electronic element having high I/O function on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

Embodiments of the invention are directed to an integrated circuit (IC) package assembly, including: one or more printed circuit boards (PCBs); and a set of chip packages, each including: an overmold; and an IC chip, overmolded in the overmold, and wherein: the chip packages are stacked transversely to an average plane of each of the chip packages, thereby forming a stack wherein a main surface of one of the chip packages faces a main surface of another one of the chip packages; and each of the chip packages is laterally soldered to one or more of said one or more PCBs and arranged transversally to each of said one or more PCBs, whereby an average plane of each of said one or more PCBs extends transversely to the average plane of each of the chip packages of the stack. Further embodiments are directed to related devices and fabrication methods.

A fan-out semiconductor package includes a first connection member having a through-hole, first and second semiconductor chips disposed in the through-hole, an encapsulant encapsulating at least portions of the first connection member, the first semiconductor chip, and the second semiconductor chip, and a second connection member disposed on the first connection member and on active surfaces of the first semiconductor chip and the second semiconductor chip. A redistribution layer of the second connection member is respectively connected to both the first and second connection pads through first and second conductors, and the second conductor has a height greater than that of the first conductor.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.