An electronic package is provided, including: a circuit structure having opposite first and second surfaces, wherein first and second circuit layers are formed on the first and second surfaces of the circuit structure, respectively, the first circuit layer having a minimum trace width less than that of the second circuit layer; a separation layer formed on the first surface of the circuit structure; a metal layer formed on the separation layer and electrically connected to the first circuit layer; an electronic element disposed on the first surface of the circuit structure and electrically connected to the metal layer; and an encapsulant formed on the circuit structure to encapsulate the electronic element. By disposing the electronic element having high I/O function on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package.

Embodiments of the invention are directed to an integrated circuit (IC) package assembly, including: one or more printed circuit boards (PCBs); and a set of chip packages, each including: an overmold; and an IC chip, overmolded in the overmold, and wherein: the chip packages are stacked transversely to an average plane of each of the chip packages, thereby forming a stack wherein a main surface of one of the chip packages faces a main surface of another one of the chip packages; and each of the chip packages is laterally soldered to one or more of said one or more PCBs and arranged transversally to each of said one or more PCBs, whereby an average plane of each of said one or more PCBs extends transversely to the average plane of each of the chip packages of the stack. Further embodiments are directed to related devices and fabrication methods.

A multilayer wiring board with built-in electronic components includes a substrate including an insulating material and having multiple opening portions, a first conductor layer formed on a surface of the substrate and having an opening portion such that the substrate has the opening portions inside the opening portion of the first conductor layer, multiple electronic components positioned in the opening portions of the substrate, and an insulating layer formed on the substrate such that the insulating layer is formed on the electronic components and on the first conductor layer. The opening portions are formed in the substrate such that the opening portions include two opening portions and that the substrate has a partition wall formed between the two opening portions.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

An electronic package is provided, including: a circuit structure having opposite first and second surfaces, wherein first and second circuit layers are formed on the first and second surfaces of the circuit structure, respectively, the first circuit layer having a minimum trace width less than that of the second circuit layer; a separation layer formed on the first surface of the circuit structure; a metal layer formed on the separation layer and electrically connected to the first circuit layer; an electronic element disposed on the first surface of the circuit structure and electrically connected to the metal layer; and an encapsulant formed on the circuit structure to encapsulate the electronic element. By disposing the electronic element having high I/O function on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

In a connection system for electronic components (1) comprising a plurality of insulating layers (2) and conductive layers (3) and further comprising at least one embedded electronic component (4) embedded within at least one of the plurality of insulating layers (2) and conductive layers (3) the at least one embedded electronic component (4) is at least one first transistor having a bulk terminal thereof in thermal contact with a thermal duct (6) comprised of a plurality of vias (7) reaching through at least one of an insulating layer (2) and a conductive layer (3) of the connection system for electronic components (1) and emerging on a first outer surface (8) of the connection system for electronic components (1) under a first surface-mounted component (10).

A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.