A semiconductor arrangement in fan out packaging has a molding compound adjacent a side of a semiconductor die. A magnetic structure is disposed above the molding compound, above the semiconductor die, and around a transmission line coupled to an integrated circuit of the semiconductor die. The magnetic structure has a top magnetic portion, a bottom magnetic portion, a first side magnetic portion, and a second side magnetic portion. The first side magnetic portion and the second side magnetic portion are coupled to the top magnetic portion and to the bottom magnetic portion. The first side magnetic portion and the second side magnetic portion have tapered sidewalls.

Embodiments may relate to a microelectronic package that includes a substrate signal path and a waveguide. The package may further include dies that are communicatively coupled with one another by the substrate signal path and the waveguide. The substrate signal path may carry a signal with a frequency that is different than the frequency of a signal that is to be carried by the waveguide. Other embodiments may be described or claimed.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A method of improving electrical interconnections between two electrical is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A packaging assembly and methodology provide a PCB substrate with one or more waveguide apertures and a conductive pattern which includes a plurality of landing pads that are disposed around peripheral edges of each waveguide aperture and that are connected to one another by trace lines so that, upon attachment and reflow of solder balls to the plurality of landing pads, the solder balls reflow along the trace lines to form a fully closed solder waveguide shielding wall disposed around peripheral edges of the first waveguide aperture.

A semiconductor module includes: a semiconductor element having, on a front face thereof, a signal terminal and a ground terminal; a transmission line body having a signal transmission portion and a ground portion; a signal connection terminal electrically connected to the signal transmission portion of the transmission line body; ground connection terminals arranged to surround the signal connection terminal and electrically connected to the ground portion of the transmission line body, the ground connection terminals and the signal connection terminal constituting a pseudo coaxial line; a heat dissipation plate having a front face in close contact with a back face of the semiconductor element; and an interposer substrate having a semiconductor-element signal pad electrically connected to the signal terminal of the semiconductor element by a conductive adhesive, a transmission-line-body-2 signal pad electrically connected to the signal connection terminal, and a ground portion electrically connected to the ground connection terminals.

An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

An electronic device has a plurality of integrated circuits fixed to a support between transmitting and receiving antennas. An integrated circuit generates a synchronization signal supplied to the other integrated circuits. Each integrated circuit is formed in a die integrating electronic components and overlaid by a connection region according to the Flip-Chip Ball-Grid-array or embedded Wafer Level BGA. A plurality of solder balls for each integrated circuit is electrically coupled to the electronic components and bonded between the respective integrated circuit and the support. The solder balls are arranged in an array, aligned along a plurality of lines parallel to a direction, wherein the plurality of lines comprises an empty line along which no solder balls are present. A conductive synchronization path is formed on the support and extends along the empty line of at least one integrated circuit, between the solder balls of the latter.

An integrated circuit includes a semiconductor substrate, electronic components integrated in the semiconductor substrate, an electric connection structure overlying the semiconductor substrate, and an conductive region, with elongated shaped, having a first and a second end. The conductive region is formed in the electric connection structure, extends over an entire length of the substrate and is not directly electrically connected to the electronic components. A first and a second synchronization connection element are electrically coupled to the first end and to the second end, respectively, of the conductive region and have each a respective synchronization connection portion facing the coupling face.