A method of manufacturing a wafer level fan-out package includes preparing a base substrate having a protrusion, providing a chip on a surface of the base substrate adjacent to and spaced from the protrusion, forming an encapsulation layer on the base substrate to encapsulate the chip and the protrusion, removing the base substrate to expose a surface of the chip and to form a recess corresponding to the protrusion in the encapsulation layer, and providing a passive element in the recession. The method obviates a problem of displacement of the passive element by thermal expansion of the encapsulation layer while it is being formed because the passive element is incorporated into the package after the encapsulation layer is formed.

Methods and systems for stacking multiple chips with high speed serializer/deserializer blocks are presented. These methods make use of Through Via (TV) to connect the dice to each other, and to the external pads. The methods enable efficient multilayer stacking that simplifies design and manufacturing, and at the same time, ensure high speed operation of serializer/deserializer blocks, using the TVs.

A method of manufacturing a wafer level fan-out package includes preparing a base substrate having a protrusion, providing a chip on a surface of the base substrate adjacent to and spaced from the protrusion, forming an encapsulation layer on the base substrate to encapsulate the chip and the protrusion, removing the base substrate to expose a surface of the chip and to form a recess corresponding to the protrusion in the encapsulation layer, and providing a passive element in the recession. The method obviates a problem of displacement of the passive element by thermal expansion of the encapsulation layer while it is being formed because the passive element is incorporated into the package after the encapsulation layer is formed.

An optoelectronic assembly and methods of fabrication thereof are provided. The assembly includes a mold compound; a photonic integrated circuit (PIC) embedded in the mold compound, that has a face exposed from the mold compound in a first plane; an interposer embedded in the mold compound, that has a face exposed from the mold compound in the first plane (i.e., co-planar with the exposed face of the PIC); and an electrical integrated circuit (EIC) coupled to the exposed face of the PIC and the exposed face of the interposer, that establishes bridging electrical connections between the PIC and the interposer.

A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

A semiconductor package includes a first semiconductor package including a core member having a through-hole, a first semiconductor chip disposed in the through-hole and having an active surface with a connection pad disposed thereon, a first encapsulant for encapsulating at least a portion of the first semiconductor chip, and a connection member disposed on the active surface of the first semiconductor chip and including a redistribution layer electrically connected to the connection pad of the first semiconductor chip, a second semiconductor package disposed on the first semiconductor package and including a wiring substrate electrically connected to the connection member, at least one second semiconductor chip disposed on the wiring substrate, and a second encapsulant for encapsulating at least a portion of the second semiconductor chip, and a heat dissipation member covering a lateral surface of the second semiconductor package and exposing an upper surface of the second encapsulant.

An apparatus is provided which comprises: a plurality of organic dielectric layers forming a substrate, a plurality of first conductive contacts on a top surface of the substrate, a plurality of second conductive contacts on a bottom surface of the substrate, a plurality of third conductive contacts on a side wall surface of the substrate, and one or more discrete capacitor(s) coupled with the third conductive contacts on the side wall surface. Other embodiments are also disclosed and claimed.

The present disclosure provides a semiconductor device and a method of making the same for suppressing warpages of an article due to a difference of temperature strains during the process of making the semiconductor device. The semiconductor device of the present disclosure includes a substrate having a main surface and a recess recessed therefrom; a semiconductor element disposed in the recess; a wiring portion connected to the substrate and electrically connected to the semiconductor element; and a sealing resin filled in the recess. The substrate includes an electrical insulative synthetic resin. The recess has a bottom surface and a connecting surface connected to the bottom surface and the main surface. The connecting surface includes a first inclined surface connected to the bottom surface; a second inclined surface connected to the main surface; and an intermediate surface connected to the first inclined surface and the second inclined surface.

A package includes a redistribution portion, a first portion, and a second portion. The first portion is coupled to the redistribution portion. The first portion includes a first switch comprising a plurality of switch interconnects, and a first encapsulation layer that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters. Each filter includes a plurality of filter interconnects. The second portion also includes a second encapsulation layer that at least partially encapsulates the first plurality of filters. The first portion includes a second switch positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters positioned next to the first plurality of filters, where the secod encapsulation layer at least partially encapsulates the second plurality of filters.

An LVDS device wherein driver and receiver functionalities are integrated in the same package, signals are routed from the individual driver and receiver elements inside the package such that all inputs are one side of the package, and all outputs are on the opposite side of the package, allowing for an optimized signal flow through the package. All required capacitors and resistors are integrated inside the package; no external electronic components are required. All of the above novelties also contribute to a 6:1 reduction in size compared to current state-of-the-art, for the same number of communication channels. Embodiments include a packaging topology adaptable to extreme environments, including radiation tolerant to 300 kRad (based on the die technology), so that module operational temperature is in a range of 55 C. to +100 C. and storage temperature can be as low as 184 C.