Methods of forming secured substrates are presented. These methods involve creating signal-blocking vias and a series of meshes on various layers of an electronic substrate to mask signal traces and prevent tampering. By strategically positioning ground and power meshes on different layers, and optionally including dummy meshes, the method significantly increases the privacy and security of the electronic substrate. These techniques can also be applied inside or on integrated circuits to enhance security.

A printed circuit board including an electronic component and a method of producing the same are provided. The printed circuit board includes a multilayered substrate including an insulation layer and an inner circuit layer laminated therein, a cavity disposed in the multilayered substrate, a via disposed in the insulation layer and configured to electrically connect the inner circuit layer with another inner circuit layer, a first electronic component inserted in the cavity, and a bump pad disposed on a surface of the cavity facing the first electronic component, and the bump pad is formed by having the insulation layer and the via exposed to a lateral side of the cavity.

A printed circuit board including an electronic component and a method of producing the same are provided. The printed circuit board includes a multilayered substrate including an insulation layer and an inner circuit layer laminated therein, a cavity disposed in the multilayered substrate, a via disposed in the insulation layer and configured to electrically connect the inner circuit layer with another inner circuit layer, a first electronic component inserted in the cavity, and a bump pad disposed on a surface of the cavity facing the first electronic component, and the bump pad is formed by having the insulation layer and the via exposed to a lateral side of the cavity.

A power semiconductor device is provided. The power semiconductor device includes a leadframe, which includes a first chip carrier part and at least one second chip carrier part, which are fitted at a distance from one another and are in each case electrically conductive, at least one first power semiconductor component applied on the first chip carrier part, at least one second power semiconductor component applied on the second chip carrier part, external contacts in the form of external leads, and a capacitor. The capacitor is mounted on two adjacent external leads.

An electronic package and a manufacturing method thereof are provided, in which an electronic element is disposed on a carrier structure with a circuit layer, a first encapsulating layer and a second encapsulating layer are formed on the carrier structure to cover the electronic element, a first antenna layer is formed on the first encapsulating layer, and a second antenna layer communicatively connected to the first antenna layer is formed on the second encapsulating layer. Therefore, the thickness of the first encapsulating layer is used to control the resonance distance of the antenna frequency so as to generate better resonance effect, and the distance between the first antenna layer and the second antenna layer is controlled by the thickness of the second encapsulating layer to increase the bandwidth of the antenna.

The present invention provides a semiconductor device and a method of making the same for suppressing warpages of an article due to a difference of temperature strains during the process of making the semiconductor device. The semiconductor device of the present invention includes a semiconductor element 31; a substrate 1 having a main surface 11 and formed with a recess 14 recessed from the main surface 11 and accommodating the semiconductor element 31; a wiring portion 20 connected to the substrate 1 and electrically connected to the semiconductor element 31; and a sealing resin 4 filled in the recess 14. The substrate 1 includes an electrical insulative synthetic resin. The recess 14 has a bottom surface 141 and a connecting surface 142 connected to the bottom surface141 and the main surface11. The connecting surface 142 includes a first inclined surface 142a having one end connected to the bottom surface 141 and inclined with respect to the bottom surface 141; a second inclined surface 142b having one end connected to the main surface 11 and inclined with respect to the main surface 11; and an intermediate surface 142c connected to another end of the first inclined surface 142a and another end of the second inclined surface 142b.

A package includes a redistribution portion, a first portion, and a second portion. The first portion is coupled to the redistribution portion. The first portion includes a first switch comprising a plurality of switch interconnects, and a first encapsulation layer that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters. Each filter includes a plurality of filter interconnects. The second portion also includes a second encapsulation layer that at least partially encapsulates the first plurality of filters. The first portion includes a second switch positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters positioned next to the first plurality of filters, where the second encapsulation layer at least partially encapsulates the second plurality of filters.

Integrated circuits are described which directly connect a semiconductor interposer to a motherboard or printed circuit board by way of large pitch connections. A stack of semiconductor interposers may be connected directly to one another by a variety of means and connected to a printed circuit board through only a ball grid array of solder bumps. The stack of semiconductor interposers may include one or more semiconductor interposers which are shifted laterally to enable directly electrical connections to intermediate semiconductor interposers. The top semiconductor interposer may have no electrical connections on the top to increase security by making electrical taps much more difficult. An electrically insulating layer may be incorporated between adjacent semiconductor interposers and cavities or air gaps may also be included within one or more semiconductor interposers.

The present disclosure provides a power module with the integration of a control circuit at least, including: a power substrate; a power device mounted on the power substrate; and at least one control substrate which supports the control circuit, is electrically connected with the power substrate and disposed at an angle of inclination on a surface of the power substrate on which the power device is mounted; wherein the angle of inclination is greater than or equal to 45 degrees and smaller than or equal to 135 degrees. In the power module provided by the present disclosure, only the power substrate as well as the connections between the control substrate and the power substrate occupies the footprint area of the power module, and thus the horizontal footprint area of the power module is effectively reduced and thereby the power density of the power module is increased.

Some embodiments include apparatus and methods using a package substrate and a die coupled to the package substrate. The package substrate includes conductive contacts, conductive paths coupled to the conductive contacts, and a resistor embedded in the package substrate. The die includes buffer circuits and a calibration module coupled to the buffer circuits and the resistor. The buffer circuits include output nodes coupled to the conductive contacts through the conductive paths. The calibration module is configured to perform a calibration operation to adjust resistances of the buffer circuits based on a value of a voltage at a terminal of the resistor during the calibration operation.