A method includes forming a dielectric layer over a carrier, forming a plurality of bond pads in the dielectric layer, and performing a planarization to level top surfaces of the dielectric layer and the plurality of bond pads with each other. A device die is bonded to the dielectric layer and portions of the plurality of bond pads through hybrid bonding. The device die is encapsulated in an encapsulating material. The carrier is then demounted from the device die and the dielectric layer.

A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

A package includes a first die, a second die, an encapsulant, and through insulating vias (TIV). The first die has a first bonding structure. The first bonding structure includes a first dielectric layer and first connectors embedded in the first dielectric layer. The second die has a semiconductor substrate and a second bonding structure over the semiconductor substrate. The second bonding structure includes a second dielectric layer and second connectors embedded in the second dielectric layer. Sidewalls of the second dielectric layer are aligned with sidewalls of the semiconductor substrate. The first bonding structure is in physical contact with the second bonding structure such that the first dielectric layer is bonded to the second dielectric layer and the first connectors are bonded to the second connectors. The encapsulant laterally encapsulates the second die. The TIVs are aside the second die and are connected to the first bonding structure.

Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

Improved electrical and thermal properties of solder alloys are achieved by the use of micro-additives in solder alloys to engineer the electrical and thermal properties of the solder alloys and the properties of the reaction layers between the solder and the metal surfaces. The electrical and thermal conductivity of alloys and that of the reaction layers between the solder and the -metal surfaces can be controlled over a wide range of temperatures. The solder alloys produce stable microstructures wherein such stable microstructures of these alloys do not exhibit significant changes when exposed to changes in temperature, compared to traditional interconnect materials.

A package includes a first die, a second die, an encapsulant, and through insulating vias (TIV). The first die has a first bonding structure. The first bonding structure includes a first dielectric layer and first connectors embedded in the first dielectric layer. The second die has a second bonding structure. The second bonding structure includes a second dielectric layer and second connectors embedded in the second dielectric layer. The first dielectric layer is hybrid bonded to the second dielectric layer. The first connectors are hybrid bonded to the second connectors. The encapsulant laterally encapsulates the second die. The TIVs penetrate through the encapsulant and are connected to the first bonding structure.

In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory. Here, the insulating film is formed by performing a first heat treatment to the organic material. Also, after a second heat treatment is performed to the semiconductor wafer, and the non-volatile memory to which the data is written is checked, a barrier layer and a first solder material are formed on the surface of the bonding pad located in a first region by using an electroplating method. Further, a bump electrode is formed in the first region by performing a third heat treatment to the first solder material.

Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is In.sub.x1Al.sub.y1Ga.sub.(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.