A solder paste that contains or consists of (i) 10-30% by weight of at least one type of particles that each contain a phosphorus fraction of >0 to 500 wt-ppm and are selected from copper particles, copper-rich copper/zinc alloy particles, and copper-rich copper/tin alloy particles, (ii) 60-80% by weight of at least one type of particles selected from tin particles, tin-rich tin/copper alloy particles, tin-rich tin/silver alloy particles, and tin-rich tin/copper/silver alloy particles, and (iii) 3-30% by weight solder flux, in which the mean particle diameter of metallic particles (i) and (ii) is 15 m.

A method of determining curing conditions is for determining the curing conditions of a thermosetting resin to seal a conductive part between a substrate and an electronic component. A curing degree curve is created. The curing degree curve indicates, with respect to each of heating temperatures, relationship between heating time and curing degree of the thermosetting resin. On the basis of the created curing degree curve, a void removal time of a void naturally moving upward in the thermosetting resin, at a first heating temperature, is calculated. The first heating temperature is one of the heating temperatures.

Discloses is a method of bonding a semiconductor device, for example, a sintering bonding method for a semiconductor device that can mix pure particles and copper (I) oxide nano particles on a metal substrate. The paste of the present invention may provide low-cost copper paste increasing a copper density as a bonding material when bonding a semiconductor chip continuously used at a high temperature. The copper paste of the present invention may suppress the occurrence of pores or cracks when sintering by heating the copper paste under the reduction atmosphere as saving material costs and implementing an optimum high heat-resistance bonding.

The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

A flux formulation includes an activator and a protic solvent. The activator may be glutaric acid, levulinic acid, 2-ketobutyric acid, 2-oxovaleric acid, or mixtures thereof. Suitable protic solvents include alkanediol, alkoxy propanol and alkoxy ethanol. The flux formulation may be a no-clean flux formulation that may be used in the soldering of electronic circuit board assemblies, for example, in conjunction with a support fixture having a planar back surface that minimizes vibrations during processing that might otherwise cause misalignment between a chip and a substrate prior to solder reflow.

In various embodiments, a die is provided. The die may include a die body, and at least one of a front side metallization structure on a front side of the die body and a back side metallization structure on a back side of the die body such that the die is plane or includes a positive radius of curvature at a die attach process temperature range.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.

Provided is an electrode like a protruding electrode that is self-standing on a substrate. A conductive paste (202) contains a conductive powder, an alcoholic liquid component, and no adhesives. The conductive powder contains conductive particles having a thickness of 0.05 m or more and 0.1 m or less and a representative length of 5 m or more and 10 m or less, the representative length being a maximum diameter in a plane perpendicular to the direction of the thickness. The weight percentage of the alcoholic liquid component relative to the conductive paste is 8% or more and 20% or less.