A semiconductor structure including chips is provided. The chips are arranged in a stack. Each of the chips includes a radio frequency (RF) device. Two adjacent chips are bonded to each other. The RF devices in the chips are connected in parallel. Each of the RF devices includes a gate, a source region, and a drain region. The gates in the RF devices connected in parallel have the same shape and the same size. The source regions in the RF devices connected in parallel have the same shape and the same size. The drain regions in the RF devices connected in parallel have the same shape and the same size.

A Doherty amplifier includes first and second input terminals, first and second amplifiers, and an output combiner circuit. The first amplifier includes a first amplifier input coupled to the first input terminal, and a first amplifier output. The second amplifier includes a second amplifier input coupled to the second input terminal, and a second amplifier output. The output combiner circuit is coupled between the first amplifier output, the second amplifier output, and a final summing node. The output combiner circuit includes a first inductive element, a first capacitor integrated within an integrated passive device (IPD), and a second inductive element. The first inductive element is coupled between the first amplifier output and a first terminal of the first capacitor, and the second inductive element is coupled between a combining node and the first terminal of the first capacitor. A second terminal of the first capacitor is coupled to ground.

Radio frequency integrated device packages having bump and/or ball launch structures are disclosed herein. The bump launch structures can comprise patterned metallic and insulating material that substantially matches the impedance of a radio frequency integrated device die. The ball launch structures can comprise patterned metallic and insulating material that substantially matches the impedance of a system board.

Radio frequency integrated device packages having bump and/or ball launch structures are disclosed herein. The bump launch structures can comprise patterned metallic and insulating material that substantially matches the impedance of a radio frequency integrated device die. The ball launch structures can comprise patterned metallic and insulating material that substantially matches the impedance of a system board.

A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second substrate and a second electronic component. The first electronic component is disposed over a first through hole of the first substrate. The first electronic component is electrically connected to a first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole. The second electronic component is disposed over a second through hole of the second substrate. The second electronic component is electrically connected to a second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole.

A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second substrate and a second electronic component. The first electronic component is disposed over a first through hole of the first substrate. The first electronic component is electrically connected to a first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole. The second electronic component is disposed over a second through hole of the second substrate. The second electronic component is electrically connected to a second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole.

In certain aspects, a heterojunction bipolar transistor (HBT) comprises a collector mesa, a base mesa on the collector mesa, and an emitter mesa on the base mesa. The emitter mesa has a plurality of openings. The HBT further comprises a plurality of base metals in the plurality of openings connected to the base mesa.

Disclosed are examples of multi-die modules that includes a die (e.g., a power amplifier) and an adjacent die placed side-by-side and bonded onto a substrate with a mold compound. The die (e.g., a switch or a low noise amplifier) may be double EMI shielded to minimize or even eliminate EMI/noise coupling with the adjacent die (e.g., switch, low noise amplifier, etc.). Another mold compound, which can be thermally conductive, may be provided to improve transfer of heat away from the die and/or the adjacent die.

A power amplifier module includes a module substrate. First and second heat dissipation structures extend through the module substrate, and each has a first surface exposed at a mounting surface of the module substrate, and a second surface exposed at a bottom surface of the module substrate. The first surfaces of the first and second heat dissipation structures are physically separated by a portion of the mounting surface. First and second amplifier dies are coupled to the first surface of the first heat dissipation structure. The first amplifier die includes a first power transistor that functions as a driver amplifier. The second amplifier die includes a second power transistor that functions as a first final amplifier. The third amplifier die is coupled to the first surface of the second heat dissipation structure, and the third amplifier die includes a third power transistor that functions as a second final amplifier.

An electronic package is provided, in which a plurality of antenna structures and a heat sink are integrated on a package module including an electronic element, so as to guide the heat energy generated by the electronic element out of the package module via the heat sink. Therefore, when the electronic package is configured with the plurality of antenna structures, the heat dissipation of the electronic element can be improved.