Method for manufacturing a semiconductor device includes: preparing a first subassembly in which an upper surface of the conductive spacer is soldered on the second conductive member and preliminary solder is provided on a lower surface of the conductive spacer; preparing a second subassembly in which the lower surface of the semiconductor element is soldered on the first conductive member and the bonding wire is joined on upper surface of the semiconductor element; and soldering the upper surface of the semiconductor element in the second subassembly on the lower surface of the conducive spacer in the first subassembly by melting the preliminary solder in the first subassembly

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.

A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a lower surface and side surfaces of the first conductive pad, a second wafer including a second conductive pad in a second insulating layer and a second barrier layer surrounding a lower surface and side surfaces of the second conductive pad, the second insulating layer being bonded to the first insulating layer, and at least a portion of an upper surface of the second conductive pad being partially or entirely bonded to at least a portion of an upper surface of the first conductive pad, and a third barrier layer between portions of the first and second wafers where the first and second conductive pads are not bonded to each other.

In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.

In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.

Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.

A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration C.sub.Pd (atomic %) and an Ni concentration C.sub.Ni (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of C.sub.Pd to C.sub.Ni for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration C.sub.Au at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection width of the redistribution layer in the interconnection width direction, and the interconnection trench is provided so as to encapsulate the redistribution layer in plan view.

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.