A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a redistribution layer, a semiconductor die, conducting connectors, dummy bumps and an underfill. The semiconductor die is disposed on a top surface of the redistribution layer and electrically connected with the redistribution layer. The conducting connectors are disposed between the semiconductor die and the redistribution layer, and are physically and electrically connected with the semiconductor die and the redistribution layer. The dummy bumps are disposed on the top surface of the redistribution layer, beside the conducting connectors and under the semiconductor die. The underfill is disposed between the semiconductor die and the redistribution layer and sandwiched between the dummy bumps and the semiconductor die. The dummy bumps are electrically floating. The dummy bumps are in contact with the underfill without contacting the semiconductor die.

Provided is a mounting substrate for a semiconductor package, including a substrate having an upper surface and a lower surface opposite to each other, the substrate including a plurality of insulation layers and wirings in the plurality of insulation layers, first substrate pads and second substrate pads on the upper surface in a chip mounting region of the mounting surface, heat absorbing pads on the upper surface in a peripheral region of the mounting surface adjacent to the chip mounting region, and connection lines in the substrate, the connection lines being configured to thermally couple the heat absorbing pads and the second substrate pads to each other.

According to one embodiment, a semiconductor device includes a lead frame, a semiconductor chip, and a clip member. The semiconductor chip is mounted on the lead frame. The clip member is connected to an electrode of the semiconductor chip via a conductive adhesive agent. At least part of an outer peripheral edge of a connection face of the clip member is located at a position more inside than an outermost peripheral edge of the clip member in plan view.

The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.

Embodiments include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a first substrate, and a second substrate coupled to the first substrate. In an embodiment, the second substrate comprises a core, and the core comprises an organic material. In an embodiment, a third substrate is coupled to the second substrate, and the third substrate comprises a glass layer.

Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a core, where the core comprises an organic material. In an embodiment, a via is provided through a thickness of the core. In an embodiment, a shell is around the via, where the shell comprises a magnetic material. In an embodiment, a mold layer is over the core, and a bridge is embedded in the mold layer. In an embodiment, a column is through the mold layer, where the column is aligned with the via.

A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and the third surface of the imprint mold.

A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.

A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.

A semiconductor package includes a base redistribution layer, a first semiconductor chip on the base redistribution layer, at least two chip stacks stacked on the first semiconductor chip and each including a plurality of second semiconductor chips, a first molding layer covering an upper surface of the first semiconductor chip and surrounding the at least two chip stacks, a third semiconductor chip between the base redistribution layer and the first semiconductor chip, a plurality of connection posts between the base redistribution layer and the first semiconductor chips paced apart from the third semiconductor chip in a horizontal direction, and a second molding layer surrounding the third semiconductor chip and the plurality of connection posts between the base redistribution layer and the first semiconductor chip.