An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

The invention provides a lighting device (10) comprising a light source (100) configured to generate light source light (101) and a light converter element (200), wherein the light converter element (200) comprises a light transmissive matrix (205), wherein the light transmissive matrix (205) comprises: (i) a first luminescent material (210) configured to convert at least part of one or more of (a) the light source light (101) and (b) optionally a second luminescent material light (221) from an optional second luminescent material (220) into a first luminescent material light (211); and (ii) a thermo-responsive liquid crystalline compound (250); wherein the light transmissive matrix (205) is configured in thermal contact with the light source (100), and wherein the lighting device (10) is further configured to provide lighting device light (11) comprising said light source light (101), said first luminescent material light (210) and optionally said second luminescent material light (221), and wherein said light converter element is arranged for changing one or more of the color and color temperature of the lighting device light with the electrical power provided to the light source.

A light emitting device includes a light emitting element, a frame, a first light-transmissive member, and a second light-transmissive member. The light emitting element includes an element upper surface from which a light is configured to be emitted, an element bottom surface opposite to the element upper surface, and an element lateral surface connecting the element upper surface and the element bottom surface. The frame is provided to surround the light emitting element to be opposite to the element lateral surface. The first light-transmissive member is provided on the element upper surface and the element lateral surface to contact the frame. The first light-transmissive member covers the element upper surface and the element lateral surface. The second light-transmissive member is provided on the first light-transmissive member.

A display substrate is provided, which includes a base substrate, a plurality of pixel units arranged on the base substrate, and a function layer arranged at a light-emitting side of at least one pixel unit of the plurality of pixel units, wherein the function layer is configured to shield a light beam toward a first direction among light beams emitted by the at least one pixel unit, the function layer includes an organic layer and a light-shielding layer, and the light-shielding layer is arranged on a part of the organic layer, and configured to shield the light beam toward the first direction among the light beams emitted by the at least one pixel unit. An on-board display device and a method for manufacturing the display substrate are further provided.

A light system includes a first substrate and a second substrate having the first substrate thereon. A light emitting diode (LED) is connected to the first substrate. An encapsulation layer covers the LED and at least a majority of the first substrate.

A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

A method of fabricating one or more optoelectronic devices each comprising at least one passive optical component. The method comprises providing a first carrier, depositing a soluble adhesive onto a surface of the first carrier, and placing a plurality of integrated circuit devices onto said surface and curing the soluble adhesive to fix the integrated circuit devices to the carrier. The method further comprises depositing a molding material onto a plurality of molds of a second carrier to form a plurality of said passive optical components, aligning said first and second carriers such that the plurality of passive optical components contact respective zones of the plurality of integrated circuit devices, injecting a polymer compound into a space between said first and second carriers and curing said polymer compound, removing said second carrier to leave the plurality of optical components fixed to the integrated circuit devices by said polymer compound, and dissolving said soluble adhesive to remove the integrated circuit devices, polymer compound and passive optical components from the first carrier to provide a wafer package.

In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

Provided is a light-emitting device including a light-emitting element, and a light-reflective covering member that covers the light-emitting element. The light-reflective covering member includes a light-reflective material having a plate shape, silica, and an alkali metal. The light-reflective material has a mean particle size of a range of 0.6 μm to 43 μm, and the light-reflective material has an average aspect ratio of 10 or greater.