An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.

A display apparatus including: a plurality of display modules, each including a substrate and inorganic light emitting diodes mounted on a mounting surface of the substrate; a cover layer configured to cover the mounting surface of each of the display modules; and an adhesive layer arranged between the cover layer and the mounting surface of each of the display modules to cause the cover layer to adhere to the mounting surface of each of the display modules, wherein the adhesive layer includes a first region, disposed on a gap formed between the plurality of display modules, and a second region disposed on the mounting surface of each of the display modules, and wherein the adhesive layer includes a photosensitive material such that the first region of the adhesive layer is configured to undergo a photosensitive reaction based on an external light source.

An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.

A light emitting device includes a light emitting element, a light guide member, a reflecting member, a wavelength conversion member. The light emitting element has a light emitting surface and lateral surfaces. The light guiding member is provided on at least a portion of the lateral surfaces of the light emitting element. The reflecting member is provided on the lateral surface of the light emitting element with the light guiding member interposed therebetween. The wavelength conversion member is provided on the light emitting surface of the light emitting element, the light guiding member and the reflecting member. The wavelength conversion member is provided with a recess between an outer lateral surface of the wavelength conversion member and the light guiding member. The reflecting member is provided in the recess.

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

In an embodiment a radiation-emitting component includes a radiation-emitting emitter having a front side, an optical element arranged on the front side and a dielectric filter arranged between the front side and the optical element, wherein the optical element comprises a plurality of reflection surfaces and a plurality of radiation exit surfaces, wherein each of the reflection surfaces has an angle of inclination of between 45° and 80°, inclusive, with respect to the front side, wherein a main emission direction of the radiation-emitting component includes an exit angle between 10° and 80°, inclusive, with the front side, and wherein the dielectric filter is configured to transmit radiation having an entrance angle within a first angular range and to reflect radiation having an entrance angle within a second angular range.

An optoelectronic device includes a substrate, an optoelectronic semiconductor component being arranged on the substrate and having a light-emitting surface, preferably on the upper side of the optoelectronic semiconductor component, and a cover being arranged on the substrate for covering the optoelectronic semiconductor component, the cover providing a cavity which surrounds the optoelectronic semiconductor component when the cover is arranged on the substrate, the cover having at least one channel which extends along a first direction in the cover from the outside to the cavity, and the first direction being not parallel to the substrate and preferably extending at least approximately perpendicular to the substrate.

A backplane, a manufacturing method thereof, a backlight module and a display panel are provided. The backplane includes a base substrate; a first conductive layer located on the base substrate and including a wire; a first protection layer located at a side of the first conductive layer facing away from the base substrate; a second conductive layer located on the first protection layer and including a conductive sub-layer, the conductive sub-layer penetrating the first protection layer to be connected with the wire; a second protection layer located at a side of the second conductive layer facing away from the base substrate; a micro light-emitting diode (LED) penetrating the second protection layer to be connected with the conductive sub-layer; and a metallic reflective layer, located on the second protection layer and configured to reflect light irradiated onto the metallic reflective layer from the micro LED.

Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

A light-emitting module includes a light guide plate including a first surface, and a second surface opposite to the first surface; a light-emitting device disposed at a second surface side of the light guide plate; a first light-reflective member provided at a periphery of the light-emitting device at the second surface side; and a second light-reflective member provided outward of the first light-reflective member at the second surface. A diffuse reflectance of the first light-reflective member for light emitted by the light-emitting device is greater than a diffuse reflectance of the second light-reflective member for the light emitted by the light-emitting device.