H01L2933/0075

SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
20170287881 · 2017-10-05 ·

A semiconductor element and a manufacturing method thereof are provided. The semiconductor element includes a substrate and multiple semiconductor chips disposed thereon. The semiconductor chips are arranged to form multiple sequentially nested circle(s), and a circumference of each of which is arranged with multiple the semiconductor chips. The numbers of the semiconductor chips arranged on the respective circumferences of the sequentially nested circle(s) from inside to outside are gradually increased, and distances among the circumferences are gradually decreased from inside to outside. The disclosure optimizes the arrangement of the semiconductor chips to make the arrangement of the semiconductor chips be loose in the central region while more dense towards outside, which is in favor of uniform heat distribution and therefore can slow down aging and failure of the semiconductor chips and improve heat dissipation performance and light emitting effect of product.

UV LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE HAVING THE SAME
20170288088 · 2017-10-05 ·

A UV LED package and an LED module including the same. The UV LED package includes an upper semiconductor layer; a mesa disposed under the upper semiconductor layer, having an inclined side surface, and comprising an active layer and a lower semiconductor layer; a first insulation layer covering the mesa and having an opening exposing the upper semiconductor layer; a first contact layer contacting the upper semiconductor layer through the opening of the first insulation layer; a second contact layer formed between the mesa and the first insulation layer and contacting the lower semiconductor layer; a first electrode pad and a second electrode pad disposed under the first contact layer and electrically connected to the first contact layer and second contact layer, respectively; and a second insulation layer located between the first contact layer and the first and second electrode pads, wherein the active layer emits UV light having a wavelength of 405 nm or less. With this structure, the LED package has high efficiency and high heat dissipation characteristics.

METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT MOUNTING BASE MEMBER, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT MOUNTING BASE MEMBER, LIGHT EMITTING ELEMENT MOUNTING BASE MEMBER, AND LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT MOUNTING BASE MEMBER
20170288106 · 2017-10-05 · ·

A method of manufacturing a light emitting element mounting base member includes: arranging a plurality of core members each including an electrical conductor core and a light-reflecting insulating member provided on a surface of the electrical conductor core; integrally holding the core members with a light blocking resin; and partially removing the insulating members such that at least one surface of the electrical conductor cores is exposed from the light blocking resin.

Lighting module and method of manufacturing a lighting module

A lighting module (150) and a method (100) of manufacturing a lighting module, wherein the method comprises the steps of providing a heat sink material (120) in a fluid state and providing a light-source assembly (110) comprising a plurality of light sources (111) being electrically connected to a carrier (112), wherein each of the light sources has a light-emitting surface (113). The method further comprises the steps of embedding (130) the light-source assembly into the heat sink material such that the carrier and a part of each of the light sources are covered by the heat sink material while the light-emitting surface of each of the light sources is uncovered by the heat sink material, and solidifying (140) the heat sink material.

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
20170279020 · 2017-09-28 ·

Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Light emitting diodes with enhanced thermal sinking and associated methods of operation
09748461 · 2017-08-29 · ·

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Radiation-emitting component, transparent material and filler particles, and method of producing same

A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
20170236977 · 2017-08-17 ·

A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

Lighting device with high flexibility in connecting electrical components
11430933 · 2022-08-30 · ·

A lighting device and a method of manufacturing a lighting device are described. A lighting device includes a heat sink providing a first mounting area for at least one LED element, a second mounting area for at least one electrical connection assembly, and a cavity adjacent the first mounting area. An inner part is arranged at least partially inside the cavity and includes at least a first and a second connection terminal and at least one electrical connection path. The first and the second connection terminal are provided on a surface of the inner part. The first connection terminal is arranged between the first mounting area and the second connection terminal. The second connection terminal is arranged between the second mounting area and the first connection terminal. The electrical connection path is provided at least partially inside the inner part connecting the first and second electrical terminal.

DISPLAY DEVICE AND FABRICATING METHOD
20170229429 · 2017-08-10 ·

In accordance with various embodiments, the disclosed subject matter provides a display device and a related fabricating method. In some embodiments, the display device comprises: a substrate and a plurality of display units on the substrate, wherein each of the plurality of display units comprises: a first color sub-pixel, comprising a first quantum dot material and a first light source, wherein the first color sub-pixel is configured to provide a first color light by stimulating the first quantum dot material with the first light source; and a second color sub-pixel, comprising a second quantum dot material and a second light source, wherein the second color sub-pixel is configured to provide a second color light by stimulating the second quantum dot material with the second light source.