The present invention relates to a cavity filter and a connecting structure included therein. The cavity filter includes: an RF signal connecting portion spaced apart, by a predetermined distance, from an outer member having an electrode pad provided on a surface thereof; and a terminal portion configured to electrically connect the electrode pad of the outer member and the RF signal connecting portion so as to absorb assembly tolerance existing at the predetermined distance and to prevent disconnection of the electric flow between the electrode pad and the RF signal connecting portion, wherein the terminal portion includes: a first side terminal contacted with the electrode pad; and a second side terminal having a housing space in which a part of the first side terminal is housed, and connected to the RF signal connecting portion, wherein the first side terminal is provided as an elastic deformable body whose part is radially widened or narrowed against an assembly force provided by an assembler. Therefore, the cavity filter can efficiently absorb assembly tolerance which occurs through assembly design, and prevent disconnection of an electric flow, thereby preventing degradation in performance of an antenna device.

Some embodiments of the present disclosure provide a cavity high-Q triple-mode dielectric resonance structure and a filter with the resonance structure. The resonance structure includes a cavity and a cover plate, wherein an arrangement inside the cavity includes a cube-like dielectric resonance block and a dielectric support frame; the cube-like dielectric resonance block and the dielectric support frame form a triple-mode dielectric resonance rod; between the triple-mode dielectric resonance rod and an inner wall of the cavity is air; one or any end of the cube-like dielectric resonance block is connected with the dielectric support frame respectively; the dielectric support frame is connected with the inner wall of the cavity; and the cube-like dielectric resonance block forms a triple-mode resonance in three directions of axes X, Y and Z of the cavity.

A method of making a dielectric, Dk, electromagnetic, EM, structure, includes: providing a first mold portion comprising substantially identical ones of a first plurality of recesses arranged in an array; filling the first plurality of recesses with a curable first Dk composition having a first average dielectric constant greater than that of air after full cure; placing a substrate on top of and across multiple ones of the first plurality of recesses filled with the first Dk composition, and at least partially curing the curable first Dk composition; and, removing the substrate with the at least partially cured first Dk composition from the first mold portion, resulting in an assembly having the substrate and a plurality of Dk forms including the at least partially cured first Dk composition, each of the plurality of Dk forms having a three dimensional, 3D, shape defined by corresponding ones of the first plurality of recesses.

A dual-band filtering switch based on a single quad-mode dielectric resonator (DR) includes: a first printed circuit board (PCB) provided thereon with an input terminal; a second PCB provided thereon with an output terminal; a shielding shell arranged between the first and second PCBs and enclosing a shielding cavity together with the first and second PCBs; and a single quad-mode DR arranged in the shielding cavity. The first and second PCBs each include a feeding layer, a dielectric layer, and a ground layer that are stacked in sequence. The feeding layers of the first and second PCBs each include a microstrip line and a switching circuitry connected to the microstrip line, and the feeding layer is in contact with a surface of the DR to realize a switching function of the filtering switch. The proposed filtering switch feature low loss transmission and high selectivity with dual-band operation, miniaturization with the fewest resonators and friendly-integration, simultaneously.

An apparatus comprising: at least one cavity filter element wherein the cavity filter element comprises a first support, a second support distinct from the first support, and a coupling element supported by the first support and the second support. In some examples, there is a series of cavity filter elements. In some examples, the cavity filter element(s) are part of a cavity filter.

An apparatus comprising: at least one cavity filter element wherein the cavity filter element comprises a first support, a second support distinct from the first support, and a coupling element supported by the first support and the second support. In some examples, there is a series of cavity filter elements. In some examples, the cavity filter element(s) are part of a cavity filter.

Example dielectric filters, transceiver devices, and base stations are described. One example dielectric filter includes a dielectric block whose surface is covered with a metal layer, where the dielectric block includes at least two resonant cavities. The dielectric block is provided with a via hole, the via hole is located between two adjacent resonant cavities, and an inner wall of the via hole is covered with a metal layer. A first partition ring is disposed on the surface of the dielectric block and is surrounding at least one opening of the via hole, and the dielectric block is exposed in an area enclosed by an inner edge of the first partition ring and an outer edge of the first partition ring.

A passive device comprising a hollow waveguide including first and second wall structures extending in a guiding direction, an interconnecting base extending between the wall structures and an enclosure extending between the wall structures, the enclosure being located opposite the interconnecting base; and at least one array of coupled resonant structures enclosed inside the waveguide, the array being configured to provide coupled local resonators and a microwave or millimeter wave frequency passband for providing at least one selected microwave or millimeter wave signal, the array extending along the guiding direction and being located between the wall structures. Each resonant structure extends from the interconnecting base into the hollow waveguide to define a microwave or millimeter wave subwavelength resonant structure, and successive resonant structures are separated by a microwave or millimeter wave subwavelength distance. A resonance frequency of the resonant structures is less than a cut-off frequency of the waveguide.

A passive device comprising a hollow waveguide including first and second wall structures extending in a guiding direction, an interconnecting base extending between the wall structures and an enclosure extending between the wall structures, the enclosure being located opposite the interconnecting base; and at least one array of coupled resonant structures enclosed inside the waveguide, the array being configured to provide coupled local resonators and a microwave or millimeter wave frequency passband for providing at least one selected microwave or millimeter wave signal, the array extending along the guiding direction and being located between the wall structures. Each resonant structure extends from the interconnecting base into the hollow waveguide to define a microwave or millimeter wave subwavelength resonant structure, and successive resonant structures are separated by a microwave or millimeter wave subwavelength distance. A resonance frequency of the resonant structures is less than a cut-off frequency of the waveguide.

A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.