Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

The present invention features a waveguide transition. A waveguide transition is used to join two dissimilar segments of waveguide, in this case coplanar waveguide to rectangular waveguide, and vice-versa. Care taken during the design of the waveguide transition ensures that the reflection of electromagnetic waves, which may be traveling along the coplanar waveguide segment and toward the waveguide transition and subsequent rectangular waveguide segment, is minimized.

The present disclosure relates to an electronic device that includes a waveguide, a plurality of transceiving portions over the waveguide, and a cavity between the waveguide and the transceiving portions and connecting the waveguide with the transceiving portions. The cavity is configured for resonating of an electromagnetic wave from the waveguide or the transceiving portions.

Methods and apparatuses for vertically transitioning signals between substrate integrated waveguides within a multilayered printed circuit board (PCB) are disclosed. A first substrate integrated waveguide (SIW) is provided in a first layer of the PCB, the first SIW having a first terminal portion. A second SIW is provided in a second layer of the PCB, the second SIW having a second terminal portion that overlaps with the first terminal portion, wherein a first ground plane separates the first SIW and the second SIW. A vertical transition comprising an aperture in the first ground plane that is disposed in an area defined by the overlap of the first terminal portion and the second terminal portion, such that a signal propagated in the first SIW transitions to the second SIW in a different layer through the aperture.

A microwave or radio frequency (RF) device includes a substrate and a cover. The substrate has a first surface and an opposing second surface, the first surface including a first RF component and a second RF component electrically coupled to the first RF component in series. The cover is disposed over the first surface of the substrate, where the cover includes a first portion with a first width covering the first RF component, where the first portion and the first surface define a first waveguide cavity having the first width, and a second portion with a second width, less than the first width, covering the second RF component, where the second portion and the first surface define a second waveguide cavity having the second width.

A waveguide-to-waveguide power combiner/divider including a waveguide including a first opening at a first end of a first section of the waveguide in a first plane and n openings of n sections at n other ends of the waveguide, wherein n is a positive integer. At least one of the n sections is bent in at least one plane different from the plane of first section, and the first section and n sections each have at least two sides that are broader than at least two other sides; and n−1 walls within waveguide configured to divide a height of first section into n heights. Each of n sections has a height equal to one of the n heights, wherein the n−1 walls are located at a junction of the first section and the n sections and extend toward the first opening of the first section.

A microwave or radio frequency (RF) device includes a substrate and a cover. The substrate has a first surface and an opposing second surface, the first surface including a first RF component and a second RF component electrically coupled to the first RF component in series. The cover is disposed over the first surface of the substrate, where the cover includes a first portion with a first width covering the first RF component, where the first portion and the first surface define a first waveguide cavity having the first width, and a second portion with a second width, less than the first width, covering the second RF component, where the second portion and the first surface define a second waveguide cavity having the second width.

A transition device for a hollow waveguide comprises a rectangular structure comprising an inlet wall and interior extending from the inlet wall along a longitudinal axis. The inlet wall is configured to receive a transmission line comprising an antenna. The antenna forms a proximal end proximate to the inlet wall and a distal end configured to extend into the rectangular structure of the hollow waveguide. A channel is formed in the rectangular structure. The channel comprises a base forming a tuning surface. The tuning surface is configured to extend along a length of the antenna in a spaced configuration parallel to the longitudinal axis.

According to one aspect of the invention, there is provided a connector for connecting a waveguide and a board, comprising: a first opening part formed in a direction perpendicular to one side of a board and coupled to the one side of the board; a second opening part formed in a direction parallel to a longitudinal direction of a waveguide for signal transmission, wherein the waveguide is capable of being coupled to the second opening part; and a signal guide part connecting the first and second opening parts and including a hollowness surrounded by a conductive layer therein.

A connection structure includes a dielectric waveguide line and a rectangular waveguide. The dielectric waveguide line transmits a high-frequency signal in a transmission region surrounded by a first conductor layer, a second conductor layer, and two arrays of via hole groups. A coupling window is formed in the second conductor layer. The rectangular waveguide is disposed in such a way that an open end surface of the rectangular waveguide faces the coupling window, and that the transmission direction of the dielectric waveguide line becomes orthogonal to the transmission direction of the rectangular waveguide. A plurality of recesses are formed on a first substrate surface in the vicinity of the coupling window. A recessed conductor layer electrically connected to the first conductor layer is formed on inner wall surfaces of the plurality of recesses.