H01R13/7195

Planar transformer for energy transfer
11101063 · 2021-08-24 · ·

A planar transformer for power transmission, having vertical and horizontal extents, includes a circuit board having a sandwich-type structure with at least three layers to form electrical conductors. First and second layers of these layers form outer layers of the circuit board, and each additional one of these layers forms an inner layer of the circuit board. An insulation material with a minimum thickness is arranged between all of these layers, with a number of at least three mutually galvanically isolated circuits. A first circuit forms a primary circuit and each additional circuit forms an equally entitled secondary circuit, having a magnetic core assembled from two interconnected magnetic core parts. A first core part with a central part and two outer legs forms a U shape. The circuit board has two recesses, and the two outer legs of the first core part are inserted into these recesses and connected to the second core part at their ends remote from the central part. A conductor is formed on at least one of the outer layers for exactly one single circuit of the at least three circuits, and a conductor of at least one circuit of the at least three circuits is wound around a first outer leg, and conductors of at least two additional circuits of the at least three circuits are wound around the second outer leg.

Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough

An EMI/energy dissipating filter for an active implantable medical device (AIMD) is described. The filter comprises a first gold braze hermetically sealing the insulator to a ferrule that is configured to be mounted in an opening in a housing for the AIMD. A lead wire is hermetically sealed in a passageway through the insulator by a second gold braze. A circuit board substrate is disposed adjacent the insulator. A two-terminal chip capacitor disposed adjacent to the circuit board has an active end metallization that is electrically connected to the active electrode plates and a ground end metallization that is electrically connected to the at least one ground electrode plates of the chip capacitor. There is a ground path electrically extending between the ground end metallization of the chip capacitor and the ferrule. The ground path comprises at least a first electrical connection material connected directly to the first gold braze, and at least an internal ground plate disposed within the circuit board substrate with the internal ground plate being electrically connected to both the first electrical connection material and the ground end metallization of the chip capacitor. An active path electrically extends between the active end metallization of the chip capacitor and the lead wire.

Electrical Connection For A Hermetic Terminal For An Active Implantable Medical Device Utilizing A Ferrule Pocket
20210162220 · 2021-06-03 ·

A feedthrough for an AIMD is described. The feedthrough includes an electrically conductive ferrule having a ferrule sidewall defining a ferrule opening. The ferrule sidewall has a height. At least one recessed pocket has a depth extending part-way through the height of the ferrule. An oxide-resistant pocket-pad is nested in the recessed pocket. An electrical connection material is supported on the pocket-pad for making an oxide-resistant electrical connection to the ferrule. An insulator is hermetically sealed to the ferrule in the ferrule opening. At least one active via hole extends through the insulator with an active conductive pathway residing in and hermetically sealed to the insulator in the active via hole.

Device with USB port

An electronic device comprising a USB port and a PCB is provided. A first cabling layer of the PCB has a first floating area and a line outside the first floating area, an insulation medium is between the first floating area and the line, a second cabling layer of the PCB is adjacent to the first cabling layer and has a first metal area, an orthographic projection of the first floating area on the second cabling layer and the first metal area have an overlapping area, and the first floating area is not connected to the first metal area; and a metal housing of the USB port has a plurality of fixed contacts fastened to the PCB and not connected to a ground of the PCB, the contacts include a first fixed contact connected to the first floating area and not connected to the first metal area.

Hermetic terminal for an active implantable medical device having a feedthrough capacitor partially overhanging a ferrule for high effective capacitance area

A filter feedthrough for an AIMD includes an electrically conductive ferrule. An insulator hermetically seals a ferrule opening with either a first gold braze, a ceramic seal, a glass seal or a glass-ceramic seal. At least one conductive pathway is hermetically sealed to and disposed through the insulator body in non-conductive relationship with the ferrule. A feedthrough capacitor includes at least one active and ground electrode plate disposed within a capacitor dielectric and electrically connected to a capacitor active metallization and a capacitor ground metallization, respectively. At least a first edge of the feedthrough capacitor extends beyond a first outermost edge of the ferrule. At least a second edge of the feedthrough capacitor does not extend beyond a second outermost edge of the ferrule, or said differently, the second edge is either aligned with or setback from the second outermost edge of the ferrule.

Connector having a ferrite and a sealing member

It is aimed to suppress water intrusion into an internal accommodation space for accommodating a ferrite and the adhesion of water to a male terminal by providing a sealing member. A connector (10) includes an inner housing (16), an outer housing 14 including a rear receptacle (30) into which the inner housing (16) is fit, and ferrites (12) including ferrite-side insertion holes (48) through which busbars (18) are inserted. The ferrites (12) are accommodated into internal accommodation spaces (S) formed inside by the inner housing (16) and the rear receptacle (30) in a fit state. A sealing member (20) is sandwiched between the rear receptacle (30) and the inner housing (16) to suppress water intrusion into the internal accommodation spaces (S).

CONNECTOR
20210013683 · 2021-01-14 ·

A connector 110 is provided with a plurality of ferrites 114 and a housing 116 including a plurality of accommodating portions 139 capable of individually accommodating the plurality of ferrites 114 from a first direction. The plurality of accommodating portions 139 are disposed side by side in a second direction intersecting the first direction. Two intermediate walls 138 are disposed between the accommodating portions 139 adjacent in the second direction with a space S defined therebetween in a third direction intersecting the first and second directions.

Flat-through capacitor mounted in a tombstone position on a hermetic feedthrough for an active implantable medical device

A three-terminal flat-through EMI/energy dissipating filter comprises an active electrode plate through which a circuit current passes between a first terminal and a second terminal, a first shield plate on a first side of the active electrode plate, and second shield plate on a second side of the active electrode plate opposite the first shield plate. The first and second shield plates are conductively coupled to a grounded third terminal. Both the effective capacitance area or overlapping surface area of the active electrode plate and the surrounding ground shield plates and the dielectric constant of the insulating layers between the active electrode plate and the ground shield plates is raised to achieve a higher capacitance value for the three-terminal flat-through capacitor.

Flat-through capacitor mounted in a tombstone position on a hermetic feedthrough for an active implantable medical device

A three-terminal flat-through EMI/energy dissipating filter comprises an active electrode plate through which a circuit current passes between a first terminal and a second terminal, a first shield plate on a first side of the active electrode plate, and second shield plate on a second side of the active electrode plate opposite the first shield plate. The first and second shield plates are conductively coupled to a grounded third terminal. Both the effective capacitance area or overlapping surface area of the active electrode plate and the surrounding ground shield plates and the dielectric constant of the insulating layers between the active electrode plate and the ground shield plates is raised to achieve a higher capacitance value for the three-terminal flat-through capacitor.

Ground electrical path from an MLCC filter capacitor on an AIMD circuit board to the ferrule of a hermetic feedthrough

An EMI/energy dissipating filter for an active implantable medical device (AIMD) is described. The filter comprises a first gold braze hermetically sealing the insulator to a ferrule that is configured to be mounted in an opening in a housing for the AIMD. A lead wire is hermetically sealed in a passageway through the insulator by a second gold braze. A circuit board substrate is disposed adjacent the insulator. A two-terminal chip capacitor disposed adjacent to the circuit board has an active end metallization that is electrically connected to the active electrode plates and a ground end metallization that is electrically connected to the at least one ground electrode plates of the chip capacitor. There is a ground path electrically extending between the ground end metallization of the chip capacitor and the ferrule. The ground path comprises at least a first electrical connection material connected directly to the first gold braze, and at least an internal ground plate disposed within the circuit board substrate with the internal ground plate being electrically connected to both the first electrical connection material and the ground end metallization of the chip capacitor. An active path electrically extends between the active end metallization of the chip capacitor and the lead wire.