There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.

A solid state laser apparatus includes a plurality of cold heads, a cooling apparatus, laser media and a seed light source. The cooling apparatus is configured to cool the plurality of cold heads. The laser media are arranged in contact with each of the plurality of cold heads, and configured to amplify a first laser beam and reflect the first laser beam. The seed light source is configured to irradiate a first laser medium of the laser media with the first laser beam. The first laser medium is arranged on a first of the cold heads. The laser media are configured to reflect the first laser beam irradiated to the first laser medium to a second laser medium of the laser media. The second laser medium is arranged on a second of the cold heads. The cold heads are configured to cool the laser media.

An optical system element includes a first enclosure designed for receiving in circulation a functional fluid and at least one inlet and/or outlet window located on the first enclosure and through which a light beam can pass. The inlet and/or outlet window includes two viewports which delimit a spacer cavity adjacent to the first enclosure. The spacer cavity is designed to receive a second fluid with a predetermined optical index and is equipped with a device for adjusting the pressure therein. Degradation of a beam during its passage through the inlet and/or outlet window can be limited by careful selection of the optical index of the second fluid and the pressure in the spacer cavity.

A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

A purging system for a laser system is described. The purging system comprising a cartridge that houses a desiccant material and which is configured for removable mounting with an enclosure of the laser system. The cartridge comprising a first mesh layer that provides a means for a fluid to flow to the desiccant material housed within the cartridge. The purging system further comprises a membrane located over the first mesh layer. The purging system therefore provides a mean for passively purging the laser system and so its operation does not require the employment of a pump. The employment of the removable cartridge also has the advantage that the downtimes of the laser system with which it is deployed are reduced during periods when it is required to dry or replace the desiccant material.

A laser device includes a vacuum container including a wall portion, a laser medium disposed inside the vacuum container, a cooler disposed outside the vacuum container, and a heat conductor penetrating the wall portion in a predetermined direction and connected to the laser medium and the cooler.

A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.

A heatable element is configured to apply sufficient energy density to contaminants in an internal ambient atmosphere with in a sealable housing to drive a reaction that inactivates the contaminants.

A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.

A laser apparatus includes: a plurality of envelope blocks each provided with an optical element and a first temperature sensor and covering part of a laser beam path, the optical element being disposed on the laser beam path, the first temperature sensor being configured to measure a first temperature of gas at a position away from the optical element; an envelope body including the envelope blocks and covering the laser beam path; and a control unit connected with each first temperature sensor and configured to specify an envelope block at which increase of the first temperature is measured in the envelope body as an envelope block at which anomaly is occurring.