There is provided a cylinder including a first cylinder having an inner surface exposed; and a second cylinder joined to an outer surface of the first cylinder, the second cylinder containing alumina as a main component, the first cylinder containing yttrium-containing oxide as a main component.

There is provided a cylinder including a first cylinder having an inner surface exposed; and a second cylinder joined to an outer surface of the first cylinder, the second cylinder containing alumina as a main component, the first cylinder containing yttrium-containing oxide as a main component.

A xenon chloride (XeCl) excimer laser includes a lasing-gas mixture including a buffer gas, a noble gas, a halogen-donating gas, and deuterium. The deuterium is present in a concentration greater than about 10 parts-per-million.

A xenon chloride (XeCl) excimer laser includes a lasing-gas mixture including a buffer gas, a noble gas, a halogen-donating gas, and deuterium. The deuterium is present in a concentration greater than about 10 parts-per-million.

Laser amplification utilizing plasma confinement of a gas laser gain media is described. The gas laser gain media is compressed into plasma utilizing a self-reinforcing magnetic field referred to a plasma pinch (e.g., a flow stabilized z-pinch). In the pinch, the gas laser gain media is compressed to a high density, which improves the gain of the media. Coherent light is transmitted through the plasma pinch, which is amplified by the plasma pinch.

A xenon chloride (XeCl) excimer laser includes a lasing-gas mixture including a buffer gas, a noble gas, a halogen-donating gas, and deuterium. The deuterium is present in a concentration greater than about 10 parts-per-million.

A xenon chloride (XeCl) excimer laser includes a lasing-gas mixture including a buffer gas, a noble gas, a halogen-donating gas, and deuterium. The deuterium is present in a concentration greater than about 10 parts-per-million.

An excimer laser chamber device may include: a the laser chamber; a first electrode provided in the laser chamber; a second electrode provided in the laser chamber to face the first electrode; an electrode holder provided in the laser chamber to be connected to a high voltage; at least one connecting terminal including a first anchored portion anchored to the first electrode and a second anchored portion anchored to the electrode holder, the at least one connecting terminal being configured to electrically connect the first electrode and the electrode holder; a guide member held by the electrode holder, the guide member being configured to position the first electrode in a direction substantially perpendicular to both a direction of electric discharge between the first electrode and the second electrode and a longitudinal direction of the first electrode; and an electrode-gap-varying unit configured to move the first electrode in a direction substantially parallel to the direction of electric discharge.

A gas laser, including: a semiconductor laser, an optical beam-shaping system, a pair of electrodes, a discharge tube, a rear mirror, and an output mirror. The pair of electrodes includes two electrodes. The electrodes are symmetrically disposed at an outer layer of the discharge tube in parallel. The electrodes are connected to a radio-frequency power supply via a matching network, and the electrodes operate to modify working gas in the discharge tube through radio-frequency discharge. The rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively. The rear mirror, taken together with the output mirror and the discharge tube, form a resonant cavity. The output mirror is configured to output a laser beam.

Techniques and architecture are disclosed for preserving optical surfaces (e.g., windows, coatings, etc.) in a flowing gas amplifier laser system, such as a diode-pumped alkali laser (DPAL) system. In some instances, the disclosed techniques/architecture can be used, for example, to protect optical surfaces in a DPAL system from: (1) chemical attack by pump-bleached alkali vapor atoms and/or ions; and/or (2) fouling by adherence thereto of reaction products/soot produced in the DPAL. Also, in some instances, the disclosed techniques/architecture can be used to substantially match the geometry of the pumping volume with that of the lasing volume, thereby minimizing or otherwise reducing the effects of amplified spontaneous emission (ASE) on DPAL output power. Furthermore, in some cases, the disclosed techniques/architecture can be used to provide a DPAL system capable of producing a beam output power in the range of about 20 kW to 10 MW, or greater.