An improved architecture for optical waveguides as used in a diode-pumped alkali laser system is provided by using micro-channel-etched silicon or other metal in place of the more usual sapphire.

An improved architecture for optical waveguides as used in a diode-pumped alkali laser system is provided by using micro-channel-etched silicon or other metal in place of the more usual sapphire.

A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structure further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first photons. The gain medium is optically coupled to the luminescent concentrator to receive the second photons. The gain medium absorbs the second photons, and in response to absorbing the second photons, the gain medium emits third photons through a stimulated emission process. The third photons have less energy than the second photons.

A configuration is provided with a laser medium 1 of a refractive index nc that is an isotropic medium and includes an upper surface and a lower surface, where at least one of the upper surface and the lower surface is bonded with a cladding 2 having a refractive index satisfying a relationship of no<nc<ne or ne<nc<no. This allows selective output of only polarized light generated by a refractive index in the cladding 2 smaller than the refractive index nc at a desired wavelength (e.g. 1535 nm) which can be implemented by using the isotropic medium.

Layered glass structures and fabrication methods are described. The methods include depositing soot on a dense glass substrate to form a composite structure and sintering the composite structure to form a layered glass structure. The dense glass substrate may be derived from an optical fiber preform that has been modified to include a planar surface. The composite structure may include one or more soot layers. The layered glass structure may be formed by combining multiple composite structures to form a stack, followed by sintering and fusing the stack. The layered glass structure may further be heated to softening and drawn to control linear dimensions. The layered glass structure or drawn layered glass structure may be configured as a planar waveguide.

The present application is directed to a planar waveguide amplifier. The planar waveguide amplifier includes a substrate having an upper surface and a lower surface. The planar waveguide amplifier includes a core formed on an upper surface of the substrate. The core includes a channel configured to transmit light there through. The planar waveguide amplifier also includes an upper cladding layer formed above the core. The upper cladding layer includes a glass doped with rare earth material in an amount less than about 5% of the upper cladding layer. The application is also directed to a method of amplifying a signal.