A device includes a first cladding layer, a waveguide laser, an absorption layer, and a second cladding layer. The absorption layer is constituted by an oversaturation absorption body such as graphene. Also, the absorption layer is provided between the active layer and the distributed Bragg reflection portion. The absorption layer is formed below a core forming an optical waveguide between the active layer and a distributed Bragg reflection portion.

A device includes a first cladding layer, a waveguide laser, an absorption layer, and a second cladding layer. The absorption layer is constituted by an oversaturation absorption body such as graphene. Also, the absorption layer is provided between the active layer and the distributed Bragg reflection portion. The absorption layer is formed below a core forming an optical waveguide between the active layer and a distributed Bragg reflection portion.

A manufacturing method of a channel type planar waveguide amplifier and a channel type planar waveguide amplifier. The method is to pattern the channel structures on the surface of the optical substrate, and then seal them together with rare earth doped chalcogenide glass into the quartz tube, and finally the channel-type waveguide structure is directly created via the melt-quenching method to achieve high quality planar waveguide amplifier. Excellent side wall roughness can be assured since the present invention does not have any direct etching of rare earth ions. Chemical composition and the activity of the rare earth ions can be maintained since the whole process is not involved in any decomposition of the glass into atoms, ions or clusters as that occurs during the fabrication process of the films deposited by the traditional methods like thermal evaporation and magnetron sputtering.

A system includes a master oscillator configured to generate a first optical beam and a beam controller configured to modify the first optical beam. The system also includes a PWG amplifier configured to receive the modified first optical beam and generate a second optical beam having a higher power than the first optical beam. The second optical beam has a power of at least about ten kilowatts. The PWG amplifier includes a single laser gain medium configured to generate the second optical beam. The system further includes a feedback loop configured to control the master oscillator, PWG amplifier, and beam controller. The feedback loop includes a laser controller. The laser controller may be configured to process wavefront information or power in bucket information associated with the second optical beam to control an adaptive optic or perform a back-propagation algorithm to provide wavefront correction at an output of the PWG amplifier.

The present disclosure provides a method for producing a laminate for non-linear optics.

A device comprises three elements. The first element, comprising an optical gain structure and a laser cavity mirror structure, couples light to the second element, comprising a phase tuner. The second element couples phase tuned light to the third element. The third element, comprising an optical resonator with first and second coupler/splitter structures, provides a primary optical output from the second coupler/splitter structure. Light coupled into the optical resonator through the first coupler/splitter structure and then coupled out of the optical resonator though the first coupler/splitter structure is injected back into the optical gain structure through the second element. Light coupled out of the optical resonator through the second coupler/splitter structure is provided as the primary optical output. Characteristic of the coupler/splitter structures and the optical resonator are selected such that the light injected back into the optical gain structure reduces linewidth, and noise in primary optical output is suppressed.

A device comprises three elements. The first element, comprising an optical gain structure and a laser cavity mirror structure, couples light to the second element, comprising a phase tuner. The second element couples phase tuned light to the third element. The third element, comprising an optical resonator with first and second coupler/splitter structures, provides a primary optical output from the second coupler/splitter structure. Light coupled into the optical resonator through the first coupler/splitter structure and then coupled out of the optical resonator though the first coupler/splitter structure is injected back into the optical gain structure through the second element. Light coupled out of the optical resonator through the second coupler/splitter structure is provided as the primary optical output. Characteristic of the coupler/splitter structures and the optical resonator are selected such that the light injected back into the optical gain structure reduces linewidth, and noise in primary optical output is suppressed.

A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

A light emitting device includes a light source that emits light having a directivity from a light emitting surface of the light source, a waveguide structure that includes an optical waveguide having an inlet facing the light emitting surface, and a peripheral wall protruding from the inlet toward the light emitting surface, and a lens that is provided between the light emitting surface and the inlet. The peripheral wall has an inner surface surrounding the inlet. The peripheral wall has a first opening closer to the light emitting surface and a second opening closer to the inlet. The first opening is larger than the second opening. The peripheral wall includes a narrow opening portion in which an internal space of the peripheral wall is smaller than the lens when viewed from a direction of an optical axis of the light. The inner surface of the peripheral wall includes an inclined surface that inclines so that the internal space becomes narrower as approaching the inlet, at least in the narrow opening portion. The lens is disposed in contact with the narrow opening portion in the internal space of the peripheral wall.

An apparatus comprises a substrate. A laser is deposited above the substrate. The laser includes one or more non-self-supporting layers of crystalline material. A metallic adhesive is disposed between the laser and the substrate. The metallic adhesive is configured to adhere the laser to the substrate. A waveguide is deposited proximate the laser. The waveguide is configured to receive light from the laser and direct the light to a recording medium.