A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A leak check method for a laser device includes exposing a closed space accommodating laser medium gas to the atmosphere, isolating the closed space from the atmosphere after exposing the closed space to the atmosphere, introducing neon-containing gas containing neon gas to the closed space, and determining whether or not the neon gas is leaking to outside of the closed space.

A laser chamber of an excimer laser apparatus includes a container including a first member and a second member and configured to accommodate a laser gas in the container and a seal member disposed between two seal surfaces facing each other, a seal surface of the first member and a seal surface of the second member. A laser-gas-side surface of the seal member is made of fluorine-based rubber, and an atmosphere-side surface of the seal member is formed of a film configured to suppress atmosphere transmission.

Discharge electrodes include a cathode and an anode. The anode is disposed to face the cathode in a discharge direction perpendicular to a longitudinal direction of the cathode, and includes an electrode base 1, and a coating layer that covers a portion of a surface of the electrode base. First corners in a cross section perpendicular to the longitudinal direction connect first straight sections formed of first side surfaces that are side surfaces of the electrode base to a first curved section formed of a first discharge surface that is a discharge surface of the electrode base. The first corners are closer to the cathode in the discharge direction than second corners connecting second straight sections formed of second side surfaces that are side surfaces of the coating layer to a second curved section formed of a second discharge surface that is a discharge surface of the coating layer.

A gas laser apparatus according to an aspect of the present disclosure includes a main discharge circuit that supplies main discharge voltage that causes main discharge to a pair of main discharge electrodes, and a pre-ionization circuit that supplies pre-ionization voltage that causes corona discharge to a pre-ionization electrode. The main discharge circuit includes a step-up pulse transformer, a main capacitor and a switch connected to a primary side of the step-up pulse transformer, a first power source that charges the main capacitor, a first capacitor connected in parallel to a secondary side of the step-up pulse transformer, a first magnetic switch connected to the first capacitor, and a peaking capacitor connected in parallel to the first capacitor through the first magnetic switch and to the main discharge electrodes. An interval between start timings of the corona discharge and the main discharge is 30 ns to 60 ns inclusive.

A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

A gas laser apparatus may include a chamber filled with a laser gas; a window provided in the chamber and through which a laser beam passes; an optical path tube connected to the chamber to surround a position of the window in the chamber; a heated gas supply port configured to supply a heated purge gas into a closed space including a space in the optical path tube; and an exhaust port configured to exhaust a gas in the closed space.

An optical element for a deep-ultraviolet light source includes a crystalline substrate; a coating on an exterior surface of the crystalline substrate, the coating having a thickness along a direction that extends away from the exterior surface; and a structure on and/or in the coating, the structure including a plurality of features that extend away from the crystalline substrate along the direction. The features include an amorphous dielectric material and are arranged such that an index of refraction of the structure varies along the direction.

Disclosed are methods of and apparatus for extending a useful lifetime of a laser discharge chamber in which a polarity of an electrode positioned at a fixed position within the chamber is caused to be positive with respect to the polarity of a second electrode defining a discharge gap with the first electrode and the first electrode is made of a material that forms an erosion resistant surface when the first electrode is used and an anode. Also disclosed is an arrangement in which a first electrode is positionable with respect a second electrode defining a discharge gap with the second electrode and the position of the first electrode controlled to maintain the width of the gap within a predetermined range.

An apparatus includes: a gas maintenance system having a gas supply system fluidly connected to one or more gas discharge chambers; a detection apparatus fluidly connected to each gas discharge chamber; and a control system connected to the gas maintenance system and the detection apparatus. The detection apparatus includes: a vessel defining a reaction cavity that houses a metal oxide and is fluidly connected to the gas discharge chamber for receiving mixed gas including fluorine from the gas discharge chamber in the reaction cavity, the vessel enabling a reaction between the fluorine of the received mixed gas and the metal oxide to form a new gas mixture including oxygen; and an oxygen sensor fluidly connected to the new gas mixture to sense an amount of oxygen within the new gas mixture. The control system is configured to estimate a concentration of fluorine in the received mixed gas.