A system includes: an optical source including a plurality of optical oscillators; a spectral analysis apparatus; and a controller. Each optical oscillator is configured to produce a light beam. The controller is configured to: determine, based on data from the spectral analysis apparatus, whether the spectral property of the light beam of one of the optical oscillators is different than the spectral property of the light beam of at least another of the plurality of optical oscillators. If the spectral property of the light beam of the first one of the optical oscillators is different than the spectral property of the light beam of another of the optical oscillators, the controller is configured to adjust the spectral property of the light beam of the first one of the optical oscillators or of the light beam of at least one other of the optical oscillators.

A control method for a line narrowed gas laser apparatus is a control method for a line narrowed gas laser apparatus configured to emit a pulse laser beam including a first wavelength component and a second wavelength component. The apparatus includes a laser chamber including a pair of electrodes, an optical resonator including an adjustment mechanism configured to adjust a parameter of an energy ratio of the first and second wavelength components, and a processor in which relation data indicating a relation of the parameter of the energy ratio with a control parameter of the adjustment mechanism is stored. The control method includes receiving a command value of the parameter of the energy ratio from an external device, and acquiring, based on the relation data, a value of the control parameter corresponding to the command value and controlling the adjustment mechanism based on the value of the control parameter.

A control method of a line narrowing gas laser device includes receiving a command of either a single-wavelength mode command or a multi-wavelength mode command from an external apparatus, and controlling the line narrowing gas laser device to generate pulse laser light in accordance with the command.

A narrowed-line gas laser apparatus includes a laser chamber that accommodates a pair of electrodes disposed so as to face each other, an output coupling mirror, and a line narrowing apparatus that forms an optical resonator along with the output coupling mirror, the line narrowing apparatus including an optical system having a first region and a second region on which a first portion and a second portion of a light beam that exits out of the laser chamber are incident, the first and second portions passing through different positions in a direction in which the pair of electrodes face each other, the optical system being configured to suppress an increase in the distance between the optical path axis of the first portion and the optical path axis of the second portion.

A passively, Q-switched laser operating at an eye safe wavelength of between 1.2 and 1.4 microns is described. The laser may operate at a lasing wavelength of 1.34 microns and use a gain element of Nd:YVO.sub.4 and a saturable absorber element of V:YAG. The systems and methods to produce short pulses having a pulse duration less than 1 ns and high energy pulses having pulse energies greater than 2 μJ are described.

A frequency modulated, continuous wave (FMCW) laser using a microchip gain medium, an optical coupling element, and a tuning element is described. The laser may be part of a coherent laser ranging system.

Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

A laser apparatus according to the present disclosure includes: a laser output unit configured to perform laser oscillation; and a control unit configured to acquire first laser performance data obtained when the laser output unit performs laser oscillation based on a first laser control parameter, and second laser performance data obtained when the laser output unit performs laser oscillation based on a second laser control parameter, while laser output from the laser output unit to an external device is stopped, and determine whether the second laser performance data has been improved as compared to the first laser performance data.

An apparatus is provided, the apparatus comprising: (i) a diode-pumped solid-state laser oscillator configured to generate a pulsed laser beam having predefined beam characteristics corresponding to a current setting selection of a controller; and (ii) an amplifier configured to amplify an energy and modify a beam profile of the pulse laser beam. A beam detector is coupled to the generated beam to monitor a combination of: (i) a beam pulse width; (ii) a beam diameter; and (iii) an energy level, and generates an error signal to be sent back as a feedback signal to the controller. The controller configures the current source to output a correction current to tune the DPSSL oscillator, the wave plate, and the first polarizer to rotate a correction polarization angle and adjust the energy amplification or temporal profile to within a defined performance tolerance.

An exposure method includes reading data indicating a relation between parameters and a wavelength difference between a first pulse laser beam and a second pulse laser beam, the parameters being related to exposure conditions under which a semiconductor wafer is exposed to a plurality of pulse laser beams including the first and second pulse laser beams, determining a target value of the wavelength difference based on the data and command values of the parameters; determining a first wavelength of the first pulse laser beam and a second wavelength of the second pulse laser beam based on the target value; outputting a wavelength setting signal to a laser apparatus to cause emission of the pulse laser beams including the first pulse laser beam having the first wavelength and the second pulse laser beam having the second wavelength; and exposing the semiconductor wafer to the pulse laser beams.