A laser that emits light at all available frequencies distributed throughout the spectral bandwidth or emission bandwidth of the laser in a single pulse or pulse train is disclosed. The laser is pumped or seeded with photons having frequencies distributed throughout the superunitary gain bandwidth of the gain medium. The source of photons is a frequency modulated photon source, and the frequency modulation is controlled to occur in one or more cycles timed to occur within a time scale for pulsing the laser.

The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe.sub.3O.sub.8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ≥70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

The present disclosure describes an optical waveguide provided with an incident side reflection film and an emission side reflection film to resonate light incident via the incident side reflection film and formed to penetrate from the incident side reflection film to the emission side reflection film for propagating resonated light. The disclosure also includes a substrate to which the optical waveguide is formed from a top surface thereof and a first protection member and a second protection member formed with a material corresponding to a material of the substrate, wherein the first protection member and the second protection member are arranged on the optical waveguide such that one end facet of the first protection member forms an identical plane with a first end facet of the substrate including an optical incident end.

An infrared non-linear optical crystal has the following molecular formula: A.sub.18X.sub.21Y.sub.6M.sub.48, in which A is Ba, Sr or Pb; X is Zn, Cd or Mn; Y is Ga, In or Al; and M is S, Se or Te. The crystal belongs to trigonal system and has space group R3. The crystal Ba.sub.18Zn.sub.21Ga.sub.6S.sub.48 is a type I phase matching non-linear optical material, in a particle size range of 150˜210 μm, its powder frequency doubling intensity and the laser damage threshold are respectively 0.5 times and 28 times those of the commercial material AgGaS.sub.2. Other crystals have the same or similar structure and properties such as optical property. The infrared non-linear optical crystal of the present application has important prospects in military and civilian applications, and can be used in electro-optical countermeasures, resource detection, space antimissile and communications, etc.

A system includes a light transmitter configured to emit a first light beam. The first light beam includes a primary portion and an amplified spontaneous emission (ASE) portion. The system also includes a host material configured to receive the first light beam and emit a second light. The host material is configured to generate the second light by depopulation of chromophores of one or more dopants in the host material caused by energy of the primary portion of the first light beam. The second light is continuous wave and speckle free.

The solid state laser with conjugated oligomer active material uses a lasing medium including a conjugated oligomer embedded in a transparent crystal matrix. The lasing medium preferably also includes a thermally conductive material. A pump laser generates a pump laser beam to impinge on the lasing medium, causing the lasing medium to generate at least one amplified spontaneous emission laser beam. The transparent crystal matrix may be formed from an epoxy thermosetting plastic, such as that formed from a hardener and an epoxy, such as isobornyl acrylate, ethyl 2-cyanoacrylate, ethyl 2-cyano-3,3-bis(methylthio)acrylate, ethyl cyanoacrylate, ethyl cis-(-cyano)acrylate, poly(bisphenol A-co-epichlorohydrin) or bisphenol A. The conjugated oligomer may be 1,4-bis(9-ethyl-3-carbazo-vinylene)-9,9-dihexyl-fluorene (BECVH-DHF). The thermally conductive material may be molybdenum disulfide (MoS.sub.2) or [6,6]-phenyl-C61-butyric acid methyl ester (PCBM 60).

Disclosed is a laser system that incudes a chirped fiber oscillator, a laser amplifier, and a compressor. The laser amplifier includes a laser Faraday isolator. The fiber oscillator output is directly coupled to the laser Faraday isolator.

An infrared detection system comprises the following elements. A laser source provides radiation for illuminating a target (5). This radiation is tuned to at least one wavelength in the fingerprint region of the infrared spectrum. A detector (32) detects radiation backscattered from the target (5). An analyser determines from at least the presence or absence of detected signal in said at least one wavelength whether a predetermined volatile compound is present. An associated detection method is also provided. In embodiments, the laser source is tunable over a plurality of wavelengths, and the detector comprises a hyperspectral imaging system. The laser source may be an optical parametric device has a laser gain medium for generating a pump beam in a pump laser cavity, a pump laser source and a nonlinear medium comprising a ZnGeP.sub.2 (ZGP) crystal. On stimulation by the pump beam, the ZnGeP.sub.2 (ZGP) crystal is adapted to generate a signal beam having a wavelength in a fingerprint region of the spectrum and an idler beam having a wavelength in the mid-infrared region of the spectrum. The laser gain medium and the ZnGeP.sub.2 (ZGP) crystal are located in the pump wave cavity.

A laser for high power applications. The laser is a lamp driven slab design with a face to face beam propagation scheme and an end reflection that redirects the amplified radiation back out the same input surface. Also presented is a side to side larger amplifier configuration, permitting very high average and peak powers due to the electrical efficiency of absorbing energy into the crystal, optical extraction efficiency, and scalability of device architecture. Cavity filters adjacent to pump lamps convert the unusable UV portion of the pump lamp spectrum into light in the absorption band of the slab laser thereby increasing the overall pump efficiency. The angle of the end reflecting surface is changed to cause the exit beam to be at a different angle than the inlet beam, thereby eliminating the costly need to separate the beams external to the laser with the subsequent loss of power.

In an exemplary embodiment, a structure comprises a plurality of deterministically positioned optically active defects, wherein each of the plurality of deterministically positioned optically active defects has a linewidth within a factor of one hundred of a lifetime limited linewidth of optical transitions of the plurality of deterministically positioned optically active defects, and wherein the plurality of deterministically positioned optically active defects has an inhomogeneous distribution of wavelengths, wherein at least half of the plurality of deterministically positioned optically active defects have transition wavelengths within a less than 8 nm range. In a further exemplary embodiment, method of producing at least one optically active defect comprises deterministically implanting at least one ion in a structure using a focused ion beam; heating the structure in a vacuum at a first temperature to create at least one optically active defect; and heating the structure in the vacuum at a second temperature to remove a plurality of other defects in the structure, wherein the second temperature is higher than the first temperature.