A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A light emitting device includes a submount, a semiconductor laser device, and a base supporting the submount. The submount includes a graphite layer having upper and lower surfaces extending in first and second directions orthogonal to each other and a support layer having upper and lower surfaces extending in the first and second directions. The graphite layer includes a plurality of graphene structures layered in the first direction. Each of the plurality of graphene structures extends in the second direction. The support layer is thicker than the graphite layer. The upper surface of the support layer supports the lower surface of the graphite layer. The semiconductor laser device emits laser light through an end surface in the first direction. The semiconductor laser device includes a waveguide that extends in the first direction and is supported by the upper surface of the graphite layer.

A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

Method for obtaining a laser diode (1) with vertical mirrors, includes the steps of providing (100) a substrate (2) having optical layers (4, 6, 8); performing (102) a first dry etching of said substrate (2), so as to get two opposite transversal facets (10) having a predetermined depth, which represent the lateral walls of a cavity (12); cleaning (104) the bottom of said cavity (12); depositing (106) a coating layer (52) on the whole substrate (2); performing (108) a second etching, so as to free the bottom of the cavity (12) from the coating layer (52); performing (110) a third deep etching of the bottom of the cavity (12); and removing (112) the coating layer (52), so as to obtain said diode (1) with transversal mirrors (10).

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.