A semiconductor device comprising: a layered structure 20 configured by layering a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a substrate 11; a first light reflecting layer 41 arranged on the first surface side of the first compound semiconductor layer 21; and a second light reflecting layer 42 arranged on the second surface side of the second compound semiconductor layer 22, wherein the second light reflecting layer 42 has a flat shape; a concave surface portion 12 is formed on a substrate surface 11b; the first light reflecting layer 41 is formed on at least the concave surface portion 12; the first compound semiconductor layer 21 is formed to extend from the substrate surface 11b onto the concave surface portion 12; and a cavity is present between the first light reflecting layer 41 formed on the concave surface portion 12 and the first compound semiconductor layer 21.

A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.

A semiconductor light emitting device includes a microstrip substrate with a single-ended transmission line on a top surface, wherein the single-ended transmission line extends from a first end portion to a second end portion, the microstrip substrate has a ground plane on a bottom surface, and the ground plane is opposed and bonded to the conductive pattern. The single-ended transmission line includes a first section and a second section, wherein the second section extends from the first section and includes the second end portion. The second section is lower in characteristic impedance than the first section. A load circuit that includes the wire, the optical modulator, and the termination resistor is electrically connected between the second end portion and the conductive pattern. The load circuit is equal to or lower in the characteristic impedance than the second section.

A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

The laser module includes a QCL element, a diffraction grating unit including a movable diffraction grating, a first lens that transmits light emitted from an end surface of the QCL element and light returning from the movable diffraction grating to the QCL element, a second lens that transmits terahertz waves emitted from the QCL element, a first holder, and a package. The first holder has a support surface on which the QCL element is mounted and a side surface connected to the support surface and facing the first lens in a resonance direction. A distance from an intersection point between the side surface and the support surface to the end surface along the resonance direction is smaller than a distance between the intersection point and the first lens along the resonance direction.

A device comprising: an illumination device for emitting an illumination beam, the illumination device comprising: an emitter array comprising multiple light emitters; and a meta-structure or micro-prism array comprising multiple transmission areas, the meta-structure of micro-prisms being positioned to receive light emitted from the emitter array, in which light from the meta-structure of micro-prism forms the illumination beam, in which a first one of said multiple transmission areas is arranged to emit light in a different direction than a second one of said multiple transmission areas.

In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.

[Object] An object of the present technology is to provide a light-emitting element array capable of preventing a light-emitting element from being damaged and a method of producing the light-emitting element array.

[Solving Means] A light-emitting element array according to the present technology includes: a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.