A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.

The present invention is characterized by comprising: forming a stacked structure in which a lower cladding layer, an active layer and an upper cladding layer are stacked on an InP substrate in a shape having a mesa stripe structure; forming a first insulation film on the stacked structure by a sputtering method; forming a second insulation film thinner than the first insulation film, on the first insulation film by a plasma CVD method at a film forming temperature higher than that when the first insulation film has been formed; and forming a first electrode on the upper cladding layer, and forming a second electrode on a back surface of the InP substrate.

A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

A mounting member includes a substrate, a first metal layer, and a second metal layer. The substrate has an insulating property and has a first surface and a second surface. The substrate has a shape in which a length in a second direction perpendicular to a first direction is greater than a width in the first direction in a plan view. The first metal layer is arranged on the first surface. The second metal layer is arranged on the second surface. A width of the second metal layer is smaller than a width of the first metal layer in the first direction. A difference between a length of the first metal layer and a length of the second metal layer in the second direction is smaller than a difference between the width of the first metal layer and the width of the second metal layer in the first direction.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

The present technique reduces the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser has at least one light emitting point. The semiconductor laser is mounted on one surface of the substrate in such a manner that an electrode of the light emitting point and a pattern of the substrate are connected to each other via a bump. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A sealing portion seals a connection terminal portion of the semiconductor laser for the substrate.

A surface light-emission laser device includes: an active layer; a first DBR layer and a second DBR layer that interpose the active layer therebetween; and an insulation film and a metal layer that are provided at a position that faces a light-emission region of the active layer, and correspond to an end part of a reflection mirror on the second DBR layer side as viewed from the active layer. The surface light-emission laser device further includes: a first contact layer provided in the first DBR layer or in contact with the first DBR layer; a second contact layer provided in contact with the second DBR layer; a first electrode layer provided in contact with the first contact layer; and a second electrode layer that is in contact with the second contact layer, and provided at a position that does not face the light-emission region of the active layer.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

A vertical-cavity surface-emitting laser includes a substrate having a main surface, a first lower distributed Bragg reflector that extends to an edge of the main surface, a III-V compound semiconductor layer disposed on the first lower distributed Bragg reflector, a second lower distributed Bragg reflector disposed on the III-V compound semiconductor layer, an active layer disposed above the second lower distributed Bragg reflector and an upper distributed Bragg reflector disposed on the active layer. The first lower distributed Bragg reflector includes a first layer and a second layer that are alternately arranged. The upper distributed Bragg reflector includes a third layer and a fourth layer that are alternately arranged. The III-V compound semiconductor layer is free of aluminum or has an aluminum composition less than an aluminum composition of the third layer. The first layer has an aluminum composition greater than the aluminum composition of the third layer.

A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.